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Journal of Materials Science: Materials in Electronics
Erschienen in: Journal of Materials Science: Materials in Electronics 2/2014

01.02.2014

Structure transition and multiferroic properties of Mn-doped BiFeO3 thin films

verfasst von: Wenlong Liu, Guoqiang Tan, Guohua Dong, Xia Yan, Wei Ye, Huijun Ren, Ao Xia

Erschienen in: Journal of Materials Science: Materials in Electronics | Ausgabe 2/2014

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Abstract

Pure BiFeO3 (BFO) and Mn-doped BiFe1−yMnyO3 thin films were prepared on FTO/glass (SnO2: F) substrates by using a sol–gel method. The effects of Mn-doping on the structure and electric properties of the BFO thin films were studied. The X-ray diffraction (XRD) analysis reveals a structure transition in the Mn-doped BiFe0.96Mn0.04O3 (BFMO) thin film. The Rietveld refined XRD patterns conform the trigonal (R3c: H) and tetragonal (P422) symmetry for the BFO and BFMO thin films, respectively. The structure transition and the mixed valences of Mn ions substantially improve the electric properties of the BFMO thin film. The remnant polarization (P r) of the BFMO thin film was 105.86 μC/cm2 at 1 kHz in the applied electric field of 865 kV/cm. At an applied electric field of 150 kV/cm, the leakage current density of BFMO thin film is 1.42 × 10−5 A/cm2. It is about two orders of magnitude lower than that of the pure BFO thin film (1.25 × 10−3 A/cm2). And the enhanced saturated magnetization of the BFMO thin film is 4.45 emu/cm3.
Vorheriger Artikel Temperature compensating microwave dielectric based on the (Mg0.97Co0.03)2(Ti0.95Sn0.05)O4–CaTiO3 ceramic system
Nächster Artikel A novel microwave synthesis of nanocrystalline SnO2 and its structural optical and dielectric properties

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Literatur
1.
G. Catalan, J.F. Scott, Physics and applications of bismuth ferrite. Adv. Mater. 21, 2463 (2009)CrossRef
2.
X. Xue, G.Q. Tan, M. Cheng, G.H. Dong, Liquid phase deposition of BiFeO3 thin film on self-assembly monolayers. Mater Sci Mater Electron 24, 94–951 (2013)
3.
J. Zhang, Y.J. Wu, X.K. Chen, X.J. Chen, Structural evolution and magnetization enhancement of Bi1−xTbxFeO3. J. Phys. Chem. Solids 74, 849–853 (2013)CrossRef
4.
R. Rai, M.A. Valente, I. Bdikin, A.L. Kholkin, S. Sharma, Enhanced ferroelectric and magnetic properties of perovskite structured Bi1−x−yGdxLayFe1−yTiyO3 magnetoelectric ceramics. J. Phys. Chem. Solids 74, 905–912 (2013)CrossRef
5.
J. Wu, X. Wang, B. Zhang, J. Zhu, D. Xiao, Orientation dependence of resistive hysteresis in bismuth ferrite thin films. J. Alloys Compd. 569, 126–129 (2013)CrossRef
6.
X. Wang, H. Liu, B. Yan, Enhanced ferroelectric properties of Ce-substituted BiFeO3 thin films on LaNiO3/Si substrates prepared by sol-gel process. J. Eur. Ceram. Soc. 29, 1183–1187 (2009)CrossRef
7.
A. Jaiswal, R. Das, T. Maity, K. Vivekanand, S. Adyanthaya, P. Poddar, Temperature-dependent Raman and dielectric spectroscopy of BiFeO3 nanoparticles: signatures of spin-phonon and magnetoelectric coupling. J. Phys. Chem. C 114, 12432–12439 (2010)CrossRef
8.
A. Srivastava, H.K. Singh, V.P.S. Awana, O.N. Srivastava, Enhancement in magnetic and dielectric properties of La and Pr co substituted BiFeO3. J. Alloy. Compd. 552, 336–344 (2013)CrossRef
9.
J.W. Kim, C.M. Raghavan, Y.-J. Kim, J.-J. Oak, H.J. Kim, W.-J. Kim, M.H. Kim, T.K. Song, S.S. Kim, Electrical properties of chemical solution deposited (Bi0.9 RE 0.1)(Fe0.975Cu0.025)O3-δ (RE = Ho and Tb) thin films. Ceram. Int. 39, S189–S193 (2013)CrossRef
10.
S.K. Singh, H. Ishiwara, Room temperature ferroelectric properties of Mn-substituted BiFeO3 thin films deposited on Pt electrodes using chemical solution deposition. Appl. Phys. Lett. 88, 262908 (2006)CrossRef
11.
J. Wu, S. Qiao, J. Wang, D. Xiao, J. Zhu, A giant polarization value of Zn and Mn co-modified bismuth ferrite thin films. Appl. Phys. Lett. 102, 052904 (2013)CrossRef
12.
G.F. Cheng, Y.J. Ruan, Y.H. Huang, X.S. Wu, Structural phase transition and thermal expansion in Bi1−2.5xPr1.5xBaxFeO3 ceramics. J. Alloy. Compd. 566, 235–238 (2013)CrossRef
13.
H. Uchida, Crystal structure and ferroelectric properties of rare-earth substituted BiFeO3 thin films. J. Appl. Phys. 100, 014106 (2006)CrossRef
14.
J. Wu, J. Wang, D. Xiao, J. Zhu, Mn4+: BiFeO3/Zn2+: BiFeO3 bilayered thin films of (111) orientation. Appl. Surf. Sci. 257, 7226 (2011)CrossRef
15.
X.Q. Zhao, W. Wang, C. Zheng, Q.X. Zhu, X.M. Li, R.K. Zheng, Ferroelectric, electrical, and magnetic properties of BiFe0.95Mn0.05O3 thin films epitaxially grown on conductive Nb:SrTiO3 and La0.7Sr0.3MnO3-buffered Nb:SrTiO3 substrates. J. Mater. Sci. Mater. Electron. 24, 1677–1684 (2013)CrossRef
16.
A. Kumar, K.L. Yadav, J. Rani, Low temperature step magnetization and magnetodielectric study in Bi0.95La0.05Fe1−xZrxO3 ceramics. Mater. Chem. Phys. 134, 430–434 (2012)CrossRef
17.
S. Chauhan, M. Kumar, S. Chhoker, S.C. Katyal, H. Singh, M. Jewariya, K.L. Yadav, Multiferroic, magnetoelectric and optical properties of Mn doped BiFeO3 nanoparticles. Solid State Commun. 152, 525–529 (2012)CrossRef
18.
N. Ding, H. Deng, P. Yang, J. Chu, Structure and optical properties of BiFe1−xZnxO3 thin films fabricated by pulsed laser deposition. Mater. Lett. 82, 71 (2012)CrossRef
19.
F. Yan, M.-O. Lai, L. Lu, Enhanced multiferroic properities and valence effect of Ru-doped BiFeO3 thin film. J. Phys. Chem. C 114, 6994–6998 (2010)CrossRef
20.
J.F. Ihlefeld, W.J. Borland, J.P. Maria, Enhanced dielectric and crystalline properties in ferroelectric barium titanate thin films. Adv. Funct. Mater. 17, 1199–1204 (2007)CrossRef
21.
L. Sha, J. Miao, S.Z. Wu, X.G. Xu, Y. Jiang, L.J. Qiao, Double-perovskite multiferroic Bi2FeCrO6 polycrystalline thin film: the structural, multiferroic, and ferroelectric domain properties. J. Alloy. Compd. 554, 299–303 (2013)CrossRef
22.
C. Martin, A. Maignan, M. Hervieu, C. Autret, B. Raveau, Magnetic phase diagram of Ru-doped Sm1−x Ca x MnO3 manganites: expansion of ferromagnetism and metallicity. Phys. Rev. B 63, 174402 (2001)CrossRef
Metadaten
Titel
Structure transition and multiferroic properties of Mn-doped BiFeO3 thin films
verfasst von
Wenlong Liu
Guoqiang Tan
Guohua Dong
Xia Yan
Wei Ye
Huijun Ren
Ao Xia
Publikationsdatum
01.02.2014
Verlag
Springer US
Erschienen in
Journal of Materials Science: Materials in Electronics / Ausgabe 2/2014
Print ISSN: 0957-4522
Elektronische ISSN: 1573-482X
DOI
https://doi.org/10.1007/s10854-013-1636-x

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