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Ultrawide Bandgap AlGaN-Channel-Based HEMTs for Next-Generation Electronics Kapitel lesen Erstes Kapitel lesen

2023 | OriginalPaper | Buchkapitel

Study of Different Transport Properties of MgZnO/ZnO and AlGaN/GaN High Electron Mobility Transistors: A Review

verfasst von : Yogesh Kumar Verma, Varun Mishra, Lucky Agarwal, Laxman Singh, Santosh Kumar Gupta

Erschienen in: HEMT Technology and Applications

Verlag: Springer Nature Singapore

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Abstract

ZnO material exhibits superior properties required for several electronic applications. It has been noticed that the different temperature-based models of conventional AlGaN/GaN HEMTs have been widely studied; however, physics-based analytical models including the effect of temperature for MgZnO/ZnO HEMT are not sufficiently explored much as of now in the literature. Accordingly, in this brief, the different transport properties and Fermi energy levels of AlGaN/GaN and MgZnO/ZnO HEMT are studied with respect to different temperatures. Further, we have also comparatively reviewed the important transport properties including 2DEG density, internal electric field, and optical gain of AlGaN/GaN and MgZnO/ZnO quantum well structures having identical dimensions.

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Vorheriges Kapitel Influence of Al2O3 Oxide Layer Thickness Variation on PZT Ferroelectric Al0.3Ga0.7N/AlN/GaN E-Mode GR-MOSHEMT
Nächstes Kapitel Analytical Modeling of Electric Field and Breakdown Voltage Characteristics of AlInN/GaN HEMT with Field Plates
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Metadaten
Titel
Study of Different Transport Properties of MgZnO/ZnO and AlGaN/GaN High Electron Mobility Transistors: A Review
verfasst von
Yogesh Kumar Verma
Varun Mishra
Lucky Agarwal
Laxman Singh
Santosh Kumar Gupta
Copyright-Jahr
2023
Verlag
Springer Nature Singapore
Buch
HEMT Technology and Applications

Print ISBN: 978-981-19-2164-3

Electronic ISBN: 978-981-19-2165-0

Copyright-Jahr: 2023

DOI
https://doi.org/10.1007/978-981-19-2165-0_4

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