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Optical and Quantum Electronics

Erschienen in:

01.11.2023

Study the optoelectronic properties of reduced graphene oxide doped on the porous silicon for photodetector

verfasst von: Rafid S. Zamel, Adi M. Abdul Hussien

Erschienen in: Optical and Quantum Electronics | Ausgabe 11/2023

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Abstract

The deposition and effect of reduced Graphene Oxide (rGO) on the optoelectronic properties of Porous Silicon (PS) were investigated. The electrochemical etching (ECE) method was used to prepare the PS sample. By method drop casting technique, a reduced Graphene Oxide (rGO) was deposited in the form of a thin coating on the PS surface and is partially incorporated within PS pores. Atomic Force Microscopy (AFM), X-Ray Diffraction (XRD) and Scanning Electron Microscopy (SEM) were used to describe the structural, morphological and roughness characteristics. The Photosensitivity investigations reveal that responsivity is higher for the rGO/PS sample. The resultant’s rGO/PS, showed the best stability of the photocurrent, indicating that rGO deposition can improve the stability of porous silicon optoelectrical characteristics.

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Titel: Study the optoelectronic properties of reduced graphene oxide doped on the porous silicon for photodetector
verfasst von: Rafid S. Zamel
Adi M. Abdul Hussien
Publikationsdatum: 01.11.2023
Verlag: Springer US
Erschienen in: Optical and Quantum Electronics / Ausgabe 11/2023
Print ISSN: 0306-8919
Elektronische ISSN: 1572-817X
DOI: https://doi.org/10.1007/s11082-023-05399-z

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