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Optical and Quantum Electronics

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01.01.2024

Superior peak-to-valley current ratio in Esaki diode by utilizing a quantum well

verfasst von: Ramin Nouri Bayat, Abdollah Abbasi, Ali Asghar Orouji

Erschienen in: Optical and Quantum Electronics | Ausgabe 1/2024

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Abstract

We propose a novel structure for the Esaki tunnel diode that utilizes a quantum well in order to increase the peak-to-valley current ratio. The quantum well is formed by sandwiching a thin layer of GaP between the Si and Ge layers, which creates a potential barrier for carriers. The quantum well enhances the tunneling probability of carriers, resulting in a higher peak current while the valley current remains low; which in total results in a superior peak-to-valley current ratio. We achieve a peak-to-valley current ratio significantly higher than those of conventional heterojunction structures, almost 3.8 fold of them. We use ATLAS TCAD for simulations, which can accurately calculate band-to-band tunneling current.

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Titel: Superior peak-to-valley current ratio in Esaki diode by utilizing a quantum well
verfasst von: Ramin Nouri Bayat
Abdollah Abbasi
Ali Asghar Orouji
Publikationsdatum: 01.01.2024
Verlag: Springer US
Erschienen in: Optical and Quantum Electronics / Ausgabe 1/2024
Print ISSN: 0306-8919
Elektronische ISSN: 1572-817X
DOI: https://doi.org/10.1007/s11082-023-05632-9

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