The effect of radiation on the forward and reverse bias current–voltage (I–V) characteristics of Au/(Bi₄Ti₃O₁₂/SiO₂)/n-Si (MFIS) structures

Determining the radiation effects on the basic electrical parameters of the fabricated high-dielectric MFIS structures, they were exposed to the high-energy ⁶⁰Co γ-rays. For this purpose, the values of ideality factor (n), barrier height (Φ_B) and series resistance (R_s) were extracted from the forward bias I–V data before and after irradiation by using various methods such as standard thermionic emission (TE) theory, Cheung’s and Norde functions. Additionally, the energy-dependent profile of surface states N_ss was extracted by considering voltage dependence of n, Φ_B and R_s and compared each other. Experimental results show that the reverse saturation current (I_o), n and R_s values increase with increasing radiation dose, but Φ_B decreases. When the value of R_s is considered in the calculation of N_ss, they were found to be considerably decreased. The observed low discrepancies between N_ss after irradiation show that the use of a high-dielectric ferroelectric interlayer leads to an increase in the resistance of MS to radiation. It is more important to fabricate radiation-resisted electronic device, especially in the satellites due to hard radiation in space. As a result, N_ss, R_s and the existence of interlayer are more effectual on the I–V characteristics which must be considered in the electrical parameter calculation.