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Erschienen in:
1988 | OriginalPaper | Buchkapitel
The Influence of Disorder on the Si2p XPS Lineshape at the Si — SiO2 Interface
verfasst von : R. A. B. Devine, J. Arndt
Erschienen in: The Physics and Technology of Amorphous SiO2
Verlag: Springer US
Enthalten in: Professional Book Archive
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The origins of X ray photoelectron spectroscopy Si2p core level lineshapes and lineshifts in thermally grown SiO2 on Si are discussed. It is demonstrated that photoelectron lineshapes are related to bridging bond angle distributions through convolutions which result in linewidths being substantially narrower than initially expected. We conclude, by comparison with experiment, that broadening effects are present in SiO2 Si2p experimental spectra which mask the intrinsic linewidth expected from bond angle distribution arguments.