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Optical and Quantum Electronics

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01.07.2018

Tunability of spin Hall effect of light with semiconductor metamaterial based on magneto-optical effects

verfasst von: Hu Zheng, Cai Gao, Mingxiang Gao, Bin Guo

Erschienen in: Optical and Quantum Electronics | Ausgabe 7/2018

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Abstract

In this paper, we have demonstrated a three-layer structure to explore the characteristics of spin Hall effect of light (SHEL). It is assumed that the structure is made of a semiconductor metamaterial which consists of \(\mathrm {GaAs}\) and \(\mathrm {SiO}_{2}\) periodically and cladded with two different dielectrics, glass and \(\mathrm {TiO}_{2}\). We investigated in detail how the spin Hall effect of reflected light at glass-semiconductor metamaterial is tuned after being exposed to an external magnetic field due to the magneto-optical effects. The Faraday and Voigt effects on the vertical and horizontal shifts of SHEL are calculated and discussed. The results show that magneto-optical effects have significantly enhanced or weakened the behavior of SHEL but the way of impact is different. This simple structure proposed in the paper can be used for yielding meaningful results for studying more complex systems related to SHEL.

Vorheriger Artikel Thermoluminescence behaviour of GdAlO3:Yb3+ under gamma exposure

Nächster Artikel Modulational instability in nonlinear oppositely directed coupler with saturable delayed nonlinear response

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Titel: Tunability of spin Hall effect of light with semiconductor metamaterial based on magneto-optical effects
verfasst von: Hu Zheng
Cai Gao
Mingxiang Gao
Bin Guo
Publikationsdatum: 01.07.2018
Verlag: Springer US
Erschienen in: Optical and Quantum Electronics / Ausgabe 7/2018
Print ISSN: 0306-8919
Elektronische ISSN: 1572-817X
DOI: https://doi.org/10.1007/s11082-018-1538-5

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