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Journal of Materials Science: Materials in Electronics
Erschienen in: Journal of Materials Science: Materials in Electronics 10/2018

13.03.2018 | Review

Tunable luminescence and energy transfer properties in YVO4:Bi3+,Ln3+ (Ln = Dy, Sm, Eu) phosphors prepared by microwave sintering method

verfasst von: Lixin Yang, Xiaoyun Mi, Jiangang Su, Xiyan Zhang, Zhaohui Bai, Nengli Wang, Jun Lin

Erschienen in: Journal of Materials Science: Materials in Electronics | Ausgabe 10/2018

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Abstract

YVO4:Bi3+,Ln3+ (Ln = Dy, Sm, Eu) phosphors were successful synthesized by microwave sintering method, and characterized by X-ray powder diffraction, scanning electron microscope, photoluminescence spectra, lifetime, quantum efficiency and general structure analysis system structure refinement. Refinement results indicated that the introduced ions occupy the sites of Y3+. Under 275 nm excitation, the luminescent intensity of YVO4:Bi3+ samples reach the maximum when Bi3+ concentration is 0.02, the broad excitation spectrum of YVO4:Bi3+ has a strongest peak at near 343 nm. Doped Bi3+ can effectively improve the emission intensity of YVO4:Ln3+. The energy transfer mechanism of Bi3+ → Ln3+ was dipole-quadrupole mechanism of electric multipole interaction. The critical distance (Rc) between Ln3+ and Bi3+ were calculated by concentration quenching method. Emitting color of YVO4:Bi3+,Ln3+ phosphors were tunable by adjusting Ln3+ content. In a word, the material has a good application prospects on light emitting diodes.
Vorheriger Artikel Effects of sintering processes on the element chemical states of In, Sn and O in ITO targets
Nächster Artikel Effect of additional Zn2+ dopant on the ferromagnetic properties of Co-doped CeO2 nanoparticles prepared by sol–gel method

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Metadaten
Titel
Tunable luminescence and energy transfer properties in YVO4:Bi3+,Ln3+ (Ln = Dy, Sm, Eu) phosphors prepared by microwave sintering method
verfasst von
Lixin Yang
Xiaoyun Mi
Jiangang Su
Xiyan Zhang
Zhaohui Bai
Nengli Wang
Jun Lin
Publikationsdatum
13.03.2018
Verlag
Springer US
Erschienen in
Journal of Materials Science: Materials in Electronics / Ausgabe 10/2018
Print ISSN: 0957-4522
Elektronische ISSN: 1573-482X
DOI
https://doi.org/10.1007/s10854-018-8887-5

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