Skip to main content

2002 | OriginalPaper | Buchkapitel

A Novel Bulk Micromachining Method in Gallium Arsenide

verfasst von : Dong-il Dan Cho, Jongpal Kim, Setae Kim, Sangjun Park, Seung-Joon Paik, Chiwan Ku, Seung-Ki Lee

Erschienen in: Materials & Process Integration for MEMS

Verlag: Springer US

Aktivieren Sie unsere intelligente Suche, um passende Fachinhalte oder Patente zu finden.

search-config
loading …

In this research, we investigate wet-etching properties of GaAs in NH4OH-H2O2-H2O and develop a novel bulk micromachining process for fabricating released micro-structures using (001) GaAs substrate. For obtaining wet-etching properties with respect to crystallographic orientation, the etch rates and undercut rates of (001) GaAs are measured using various compositions of NH4OH-H2O2-H2O mixed solutions. From these experimental data, a new GaAs micromachining method in bulk (001) GaAs is developed, and used to fabricate a released microbridges with a rectangular cross section. The developed GaAs micromachining method can be very useful for low-loss, highly-tunable capacitors for RF components and for integration with GaAs optical components.

Metadaten
Titel
A Novel Bulk Micromachining Method in Gallium Arsenide
verfasst von
Dong-il Dan Cho
Jongpal Kim
Setae Kim
Sangjun Park
Seung-Joon Paik
Chiwan Ku
Seung-Ki Lee
Copyright-Jahr
2002
Verlag
Springer US
DOI
https://doi.org/10.1007/978-1-4757-5791-0_9

    Marktübersichten

    Die im Laufe eines Jahres in der „adhäsion“ veröffentlichten Marktübersichten helfen Anwendern verschiedenster Branchen, sich einen gezielten Überblick über Lieferantenangebote zu verschaffen.