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Journal of Computational Electronics
Erschienen in: Journal of Computational Electronics 4/2019

30.09.2019

RETRACTED ARTICLE: An analytical model for the effects of the variation of ferroelectric material parameters on the minimum subthreshold swing of NC-FETs

verfasst von: Raheela Rasool, Najeeb-ud-Din, G. M. Rather

Erschienen in: Journal of Computational Electronics | Ausgabe 4/2019

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Abstract

The relationships between the coercive field (E C), remanent polarization (P 0), and thickness (t FE) of a ferroelectric material are derived analytically to determine the minimum subthreshold swing (S min) of a negative-capacitance field-effect transistor (NC-FET). The interdependence of the ferroelectric material properties is defined based on the capacitance matching condition in the subthreshold region of the NC-FET. An optimized combination of the parameters of the ferroelectric material in a gate stack is proposed to achieve transfer characteristics without hysteresis as well as lower subthreshold swing. The results are validated against numerical and experimental results available in literature. Furthermore, the minimum possible subthreshold swing (S min) is obtained for different ferroelectric materials used in the gate stack of an NC-FET in the context of a manufacturable semiconductor technology. The channel doping, ferroelectric thickness, and minimum subthreshold are calculated for five different ferroelectric materials.
Vorheriger Artikel A fair comparison of the performance of charge plasma and electrostatic tunnel FETs for low-power high-frequency applications
Nächster Artikel A computational study of short-channel effects in double-gate junctionless graphene nanoribbon field-effect transistors

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Metadaten
Titel
RETRACTED ARTICLE: An analytical model for the effects of the variation of ferroelectric material parameters on the minimum subthreshold swing of NC-FETs
verfasst von
Raheela Rasool
Najeeb-ud-Din
G. M. Rather
Publikationsdatum
30.09.2019
Verlag
Springer US
Erschienen in
Journal of Computational Electronics / Ausgabe 4/2019
Print ISSN: 1569-8025
Elektronische ISSN: 1572-8137
DOI
https://doi.org/10.1007/s10825-019-01395-3

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