Analysis of electrical characteristics and conduction mechanisms in the Al/(%7 Zn-doped PVA)/p-Si (MPS) structure at room temperature

The electrical properties and current-conduction/transport mechanism of Al/(%7 Zn-doped PVA)/p-Si (MPS) structure was investigated by current–voltage (I-V), capacitance–voltage (C-V) and conductance-voltage (G/ω-V) measurements at room temperature. The energy dependent profile of surface states (N_ss) was obtained by taking into account voltage dependent effective barrier height (Φ_e), ideality factor (n) and series resistance (R_s) of the structure. Voltage dependent profile of resistivity (R_i) and some main electrical parameters such as reverse saturation current (I_o), ideality factor (n) and zero-bias barrier height (Φ_Bo) were also evaluated from the forward bias I-V data. Experimental results reveal that the fabricated MPS structure has a higher rectification ratio with low reverse leakage current. The double logarithmic I-V plot was drawn and it shows a power-law behavior of the current (I ∝ V ^m). The forward and reverse bias C-V and G/ω-V measurements were carried out at enough high frequency (1 MHz) and then to eliminate of the R_s the measured C-V and G/ω-V plots were corrected. The C-V and G/ω-V plots exhibit inductive behavior at accumulation region due to the effect of N_ss and R_s. The other some electrical parameters such as concentration of acceptor atoms (N_A) and barrier height (Φ_B) were also obtained from the slope and intercept of reverse bias C^− 2 vs V plot. Further, both the forward and reverse bias conduction mechanisms of the MPS structure are also discussed compare with the literature.