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Erschienen in:
2021 | OriginalPaper | Buchkapitel
2. Bipolar Junction Transistor
verfasst von : Stephan J. G. Gift, Brent Maundy
Erschienen in: Electronic Circuit Design and Application
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Abstract
The bipolar junction transistor or BJT is a device capable of amplifying a voltage or current, something that diodes are not able to do. This amplifying characteristic makes the BJT suitable for a wide range of applications. The device was invented in 1947 by Walter H. Brattain, John Bardeen and William Shockley who were awarded the Nobel Prize in Physics in 1956 for this invention. It revolutionized the electronics industry by enabling miniaturization of electronic circuits and increased equipment portability. This chapter discusses the characteristics of the BJT and its use in elementary amplifier circuits. At the end of it, the student will be able to: