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Journal of Materials Science: Materials in Electronics
Erschienen in: Journal of Materials Science: Materials in Electronics 10/2024

01.04.2024

Bulk acoustic wave (BAW) resonator-based MEMS magnetic field sensor

verfasst von: Vinita, Jitendra Singh

Erschienen in: Journal of Materials Science: Materials in Electronics | Ausgabe 10/2024

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Abstract

This paper experimentally demonstrates a MEMS magnetic field sensor which is working at ∼ 0.873 GHz resonant frequency. The Bulk Acoustic Wave (BAW) resonators are most suitable for high-frequency (GHz) operation and, therefore, appropriate for high-sensitivity magnetic field sensors. The sensor has a multilayer stack of (Si/SiO2/Pt/ZnO/Fe65Co35) thin films with Fe65Co35 as a magnetic field-sensing layer and Zinc Oxide (ZnO) as piezoelectric actuation layer. The influence of an external applied magnetic field up to 1847 Oe has been investigated in terms resonance frequency shift due to ΔE effect. The magnetic sensor shows sensitivity (S) of 48.23 ppm/mT with outstanding performance at high frequency and large magnetic field range (0–1847 Oe). The developed MEMS magnetic field sensors are compact, exceptionally sensitive, and possess potential utility in diverse sectors, including automotive, defense, robotics, medical apparatus, space technology, geophysics, and industrial gauging.
Vorheriger Artikel Synthesis of (Mn, Fe) co-doped Zn3P2 nanoparticles: structural, optical and magnetic properties via solid-state reaction route
Nächster Artikel Highly sensitive prismatic h-MoO3 sheets for temperature-dependent chemiresistive ammonia sensor

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Metadaten
Titel
Bulk acoustic wave (BAW) resonator-based MEMS magnetic field sensor
verfasst von
Vinita
Jitendra Singh
Publikationsdatum
01.04.2024
Verlag
Springer US
Erschienen in
Journal of Materials Science: Materials in Electronics / Ausgabe 10/2024
Print ISSN: 0957-4522
Elektronische ISSN: 1573-482X
DOI
https://doi.org/10.1007/s10854-024-12472-0

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