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Erschienen in:
01.07.2015
Cadmium content-dependent photoluminescent properties and band offsets of Zn1−x Cd x O films
Erschienen in: Journal of Materials Science: Materials in Electronics | Ausgabe 7/2015
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Abstract
In this study, the Zn1−
x
Cd
x
O (x = 0, 1.6, 3.3, and 4.7 %) films were deposited on substrates by the sol–gel technique. X-ray diffraction, photoluminescence (PL), optical absorption and conductivity measurements were used to characterize the films. The carrier concentration (NC) increases with increasing Cd content. The interstitial zinc is the origin of a NC increase. PL measurements are employed to evaluate the effect of Cd content on the energy bandgap and band offset of Zn1−
x
Cd
x
O films. It is shown that the incorporation of Cd leads to the reduced energy bandgap and the ratio of conduction band offset and valence band offset is approximately 1:2 for Zn1−
x
Cd
x
O samples. In addition, the Stokes’ shift between the absorption and emission is observed. PL can be considered as the reliable tool for evaluating the Cd content-dependent band offsets of Zn1−
x
Cd
x
O films.