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Erschienen in: Microsystem Technologies 12/2018

04.05.2018 | Technical Paper

Characterization of reduced graphene oxide obtained from vacuum-assisted low-temperature exfoliated graphite

verfasst von: Subash C. B. Gopinath, Periasamy Anbu, Thirugnanasambandan Theivasanthi, M. K. Md Arshad, Thangavel Lakshmipriya, Chun Hong Voon, Kannaiyan Pandian, Palaniyandi Velusamy, Suresh V. Chinni

Erschienen in: Microsystem Technologies | Ausgabe 12/2018

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Abstract

Graphene consists of sheets of two-dimensional allotrope carbons and is a basic element of graphite. Herein, reduced graphene oxide (rGO) were exfoliated from graphite material under vacuum and low temperature and characterized by scanning electron microscopy, transmission electron microscopy, X-ray photoelectron spectroscopy (XPS), X-ray powder diffraction and Fourier transform infrared spectroscopy (FTIR). The results revealed that the obtained rGO is morphologically well structured in the size ranges of 1–3 µm and smooth. An apparent reduction of O1s with XPS analysis was noticed. The crystalline nature of rGO was evidenced by (0 0 2) and (0 0 4) orientations. FTIR has generated clear peak stretches at 1018, 1092 and 1628 cm−1. Further, UV–visible and Raman spectroscopic optical analyses displayed the apparent peak profiles at appropriate positions. The appearance of G and D bands with the respective G/D ratio of peak intensity in Raman analysis aids to estimate D/G to be ~ 0.8. The calculated ratio with 2D/G is to be 1.7 with a single layer of graphene. Overall, the results of this study demonstrated that rGO can be obtained simply by vacuum assisted a low thermal exfoliation.

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Metadaten
Titel
Characterization of reduced graphene oxide obtained from vacuum-assisted low-temperature exfoliated graphite
verfasst von
Subash C. B. Gopinath
Periasamy Anbu
Thirugnanasambandan Theivasanthi
M. K. Md Arshad
Thangavel Lakshmipriya
Chun Hong Voon
Kannaiyan Pandian
Palaniyandi Velusamy
Suresh V. Chinni
Publikationsdatum
04.05.2018
Verlag
Springer Berlin Heidelberg
Erschienen in
Microsystem Technologies / Ausgabe 12/2018
Print ISSN: 0946-7076
Elektronische ISSN: 1432-1858
DOI
https://doi.org/10.1007/s00542-018-3921-3

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