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Journal of Materials Science: Materials in Electronics
Erschienen in: Journal of Materials Science: Materials in Electronics 1/2024

01.01.2024

Characterization of thin films Al/p-Cu2ZnSnS4 (CZTS)/Mo Schottky diode: the effect of CZTS thin film thickness

verfasst von: G. Bousselmi, A. Hannachi, N. Khemiri, M. Kanzari

Erschienen in: Journal of Materials Science: Materials in Electronics | Ausgabe 1/2024

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Abstract

In this study, the effect of Cu2ZnSnS4 (CZTS) film thickness (d) on structural and morphological properties of Cu2ZnSnS4/Mo films and electrical properties of Al/p-Cu2ZnSnS4/Mo Schottky diodes was investigated. X-ray diffraction, Raman spectroscopy, and scanning electron microscopy analyses suggest an improvement in crystalline quality of CZTS/Mo films with the increase of thickness. Electrical properties of Al/p-CZTS/Mo Schottky diodes were analyzed using I–V characteristics. Schottky diode parameters such as ideality factor, saturation current, and series resistance were calculated. Ideality factor and series resistance decrease from 1.62 to 1.32 and from 206 to 144 Ω, respectively, by increasing the thickness of CZTS layer. Impedance spectroscopy measurements highlight a decrease in resistance as a function of temperature, suggesting thermal activation of the process.
Vorheriger Artikel Epoxy resin/POSS nanocomposites with low permittivity and excellent mechanical properties
Nächster Artikel Dielectric temperature stability and energy storage performance of BST-based lead-free ceramics for X8R capacitors

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Metadaten
Titel
Characterization of thin films Al/p-Cu2ZnSnS4 (CZTS)/Mo Schottky diode: the effect of CZTS thin film thickness
verfasst von
G. Bousselmi
A. Hannachi
N. Khemiri
M. Kanzari
Publikationsdatum
01.01.2024
Verlag
Springer US
Erschienen in
Journal of Materials Science: Materials in Electronics / Ausgabe 1/2024
Print ISSN: 0957-4522
Elektronische ISSN: 1573-482X
DOI
https://doi.org/10.1007/s10854-023-11575-4

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