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Optical and Quantum Electronics

Erschienen in:

01.12.2023

Characterizing graphene/HfO₂ and HfO₂/graphene interfaces through Raman spectroscopy analysis

verfasst von: Yosra Ben Maad, Hosni Ajlani, Alan Durnez, Ali Madouri, Mehrez Oueslati, Abdelaziz Meftah

Erschienen in: Optical and Quantum Electronics | Ausgabe 14/2023

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Abstract

In this paper, we present a comparative analysis of the Raman spectra of two heterostructures: Si/SiO₂/HfO₂/Graphene and Si/SiO₂/Graphene/HfO₂. In the former configuration, the Graphene layer is transferred onto the 5 nm-thick HfO₂ layer, while the latter configuration involves the growth of à 5 nm-thick HfO₂ layer by atomic layer deposition (ALD) on the Graphene layer. The analysis of the Raman spectra has demonstrated significant differences between the interfaces Graphene/HfO₂ and HfO₂/Graphene. The distinct Raman signatures observed emphasize the critical role played by the specific order and arrangement of the Graphene and HfO₂ layers within the heterostructure, which impacts the charge transfer between these two materials and the presence or absence of strains. The Raman spectra corresponding to different thickness of the HfO₂ layer (5, 10, 15, and 20 nm) in Si/SiO₂/Graphene/HfO₂ heterostructure shows the appearance of a small shoulder on the low-frequency side of the G band around 1523 cm^-1. Furthermore, it was observed that the intensity of this shoulder diminishes as the thickness of the HfO₂ layer increases. The observed discrepancies between spectra, related to the experimental conditions employed for sample preparation, are attributed to the interplay of two phenomena: the transfer of charges among Graphene, HfO₂, and SiO₂, as well as the emergence of constraints.

Vorheriger Artikel Dynamics study of stability analysis, sensitivity insights and precise soliton solutions of the nonlinear (STO)-Burger equation

Nächster Artikel Coherent structures and sequences of exact kink and anti-kink solutions to the complex cubic–quintic Ginzburg-Landau equation perturbed by intrapulse Raman scattering

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Titel: Characterizing graphene/HfO2 and HfO2/graphene interfaces through Raman spectroscopy analysis
verfasst von: Yosra Ben Maad
Hosni Ajlani
Alan Durnez
Ali Madouri
Mehrez Oueslati
Abdelaziz Meftah
Publikationsdatum: 01.12.2023
Verlag: Springer US
Erschienen in: Optical and Quantum Electronics / Ausgabe 14/2023
Print ISSN: 0306-8919
Elektronische ISSN: 1572-817X
DOI: https://doi.org/10.1007/s11082-023-05536-8

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