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Erschienen in: Natural Computing 2/2008

01.06.2008

Combining self-healing and proofreading in self-assembly

verfasst von: David Soloveichik, Matthew Cook, Erik Winfree

Erschienen in: Natural Computing | Ausgabe 2/2008

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Abstract

Molecular self-assembly is a promising approach to bottom-up fabrication of complex structures. A major impediment to the practical use of self-assembly to create complex structures is the high rate of error under existing experimental conditions. Recent theoretical work on algorithmic self-assembly has shown that under a realistic model of tile addition and detachment, error correcting tile sets are possible that can recover from the attachment of incorrect tiles during the assembly process. An orthogonal type of error correction was recently considered as well: whether damage to a completed structure can be repaired. It was shown that such self-healing tile sets are possible. However, these tile sets are not robust to the incorporation of incorrect tiles. It remained an open question whether it is possible to create tile sets that can simultaneously resist wholesale removal of tiles and the incorporation of incorrect ones. Here we present a method for converting a tile set producing a pattern on the quarter plane into a tile set that makes the same pattern (at a larger scale) but is able to withstand both of these types of errors.

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Fußnoten
1
Some backward growth can occur as a result of insufficient attachments in a growing complex that has not been subjected to wholesale tile removal. Chen and Goel’s construction handles this type of backward growth but not the more extensive incorrect backward growth possible after tile removal.
 
2
Allowing self-assembly to start from a preexisting seed boundary as in this paper, rather than from a single seed tile as in (Winfree 2006), actually permits the use of a simpler transformation that produces a scale-up factor of just 2.
 
3
This formulation ignores the initiation free energy of hybridization, which is non-negligible. See (Winfree 1998b) for details of how this free energy can be treated, yielding a model that is formally identical, but with slightly altered physical meanings for G mc and k f .
 
4
Assuming fr 2, since r 1f, if a tile is added that bonds only with strength 1, it falls off very quickly as it should to obey the aTAM. Tiles attached with strength 2 stick much longer, allowing an opportunity for other tiles to attach to them. Once a tile is bonded with total strength 3, it is very unlikely to dissociate (unless surrounding tiles fall off first).
 
5
The approach here and in (Chen and Goel 2005) should be contrasted with the approach in (Winfree 1998b) where the effort is to maximize the “rate of growth” fr 2 while maintaining a low error rate per tile. While for the tile systems considered there, the rate of growth is indeed proportional to fr 2, the tile systems considered here and in (Chen and Goel 2005) can grow quickly even assuming fr 2. This is possible because of strong bonds that bias the assembly forward even if fr 2.
 
6
We use the standard asymptotic notation defined as follows: f(x) = O(g(x)) means that that there is c > 0 such that f(x) ≤  c·g(x) for large enough x. Similarly, f(x) =  Ω(g(x)) means that there is c > 0 such that f(x) ≥  c·g(x) for large enough x. We write f(x) = Θ(g(x)) if f(x) = O(g(x)) and f(x) = Ω(g(x)).
 
7
The Markov inequality states that for any non-negative random variable X, Pr[X ≥  a] ≤  E[X]/a where E[X] is the expected value of X.
 
8
At the reflecting barrier the expected time to take a step is twice as large since only the forward direction is possible. However, this does not affect the asymptotic results.
 
9
See (Feller 1968) for the general form of the expected duration of 1D discrete time random walks, from which the above expression is derived.
 
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Metadaten
Titel
Combining self-healing and proofreading in self-assembly
verfasst von
David Soloveichik
Matthew Cook
Erik Winfree
Publikationsdatum
01.06.2008
Verlag
Springer Netherlands
Erschienen in
Natural Computing / Ausgabe 2/2008
Print ISSN: 1567-7818
Elektronische ISSN: 1572-9796
DOI
https://doi.org/10.1007/s11047-007-9036-x

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