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Journal of Materials Science: Materials in Electronics
Erschienen in: Journal of Materials Science: Materials in Electronics 11/2020

23.04.2020

Comparison of the structure, electronic, and optical behaviors of tin-doped CdO alloys and thin films

verfasst von: M. S. Othman, Kh. A. Mishjil, H. G. Rashid, S. S. Chiad, N. F. Habubi, I. A. Al-Baidhany

Erschienen in: Journal of Materials Science: Materials in Electronics | Ausgabe 11/2020

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Abstract

Spray pyrolysis technique (SPT) was applied to fabricate CdO films doped with tin at (0–8%) concentrations on glass substrates. Structural, morphological, and optical behaviors were inspected using X-ray diffraction (XRD), scanning electron microscopy (SEM), and UV–Vis spectroscopy. Structural, electronic, and optical behaviors of Cd1−xOSnx alloys were studied in pseudo-potential method using density functional theory (DFT) in scissors approximation. The calculated electronic band structure and optical behavior were achieved in this work. Optical bandgap energy was found to increase from 2.581 to 2.943 eV via increasing Sn content, while theoretically, it was found to increase from 2.884 to 3.106 eV with the increasing Sn doping. Theoretical and experimental findings were close to each other. The linear energy-dependent dielectric functions (real part) and optical behavior-like absorbance and transmittance were also studied.
Vorheriger Artikel Effect of particle size on magnetodielectric and magnetoelectric coupling effect of CoFe2O4@BaTiO3 composite fluids
Nächster Artikel Determination of frequency and voltage dependence of electrical properties of Al/(Er2O3/SiO2/n-Si)/Al MOS capacitor

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Metadaten
Titel
Comparison of the structure, electronic, and optical behaviors of tin-doped CdO alloys and thin films
verfasst von
M. S. Othman
Kh. A. Mishjil
H. G. Rashid
S. S. Chiad
N. F. Habubi
I. A. Al-Baidhany
Publikationsdatum
23.04.2020
Verlag
Springer US
Erschienen in
Journal of Materials Science: Materials in Electronics / Ausgabe 11/2020
Print ISSN: 0957-4522
Elektronische ISSN: 1573-482X
DOI
https://doi.org/10.1007/s10854-020-03437-0

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