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Journal of Materials Science: Materials in Electronics

Erschienen in:

05.02.2021

Defect-rich porous g-C₃N₄ nanosheets photocatalyst with enhanced photocatalytic activity

verfasst von: Leicheng Li, Zhiquan Huang, Zhiping Li, Huan Li, Anming Wang

Erschienen in: Journal of Materials Science: Materials in Electronics | Ausgabe 5/2021

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Abstract

In this study, an efficient porous g-C₃N₄ nanosheet with N defect was successfully fabricated via a facile co-thermolysis method. The porous g-C₃N₄ nanosheet showed 96% degradation efficiency towards Eosin-Y within 100 min, which was about 1.48-fold higher than that of pure bulk g-C₃N₄. In addition, the modified porous g-C₃N₄ nanosheet exhibited the hydrogen evolution performance with the activity of 450 μmol with 3 h, which was 5.29-fold higher than that of pure bulk g-C₃N₄. The elevated photocatalytic activity was attributed to the synergism of porous nanosheet and N defect, which improved light harvesting and accelerated separation of photo-induced e^– and h⁺, greatly assisting in organic pollutants removal and hydrogen evolution. Furthermore, trapping experiments demonstrated that the holes and superoxide radicals were the main active species in the photocatalytic degradation of Eosin-Y solution.

Vorheriger Artikel AgNWs-a-TiOx: a scalable wire bar coated core–shell nanocomposite as transparent thin film electrode for flexible electronics applications

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Titel: Defect-rich porous g-C3N4 nanosheets photocatalyst with enhanced photocatalytic activity
verfasst von: Leicheng Li
Zhiquan Huang
Zhiping Li
Huan Li
Anming Wang
Publikationsdatum: 05.02.2021
Verlag: Springer US
Erschienen in: Journal of Materials Science: Materials in Electronics / Ausgabe 5/2021
Print ISSN: 0957-4522
Elektronische ISSN: 1573-482X
DOI: https://doi.org/10.1007/s10854-021-05363-1

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