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Microsystem Technologies
Erschienen in: Microsystem Technologies 6/2020

20.01.2020 | Technical Paper

Design and simulation of MEMS based capacitive pressure sensor for harsh environment

verfasst von: K. Srinivasa Rao, B. Mohitha reddy, V. Bala Teja, G. V. S. Krishnateja, P. Ashok Kumar, K. S. Ramesh

Erschienen in: Microsystem Technologies | Ausgabe 6/2020

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Abstract

In this paper, we have designed and simulated a capacitive pressure sensor for harsh environment. The sensor is metal–insulator-metal type sensor in which the structure is designed using gold and the dielectric using silicon nitrate with thickness of 0.5 μm. The device achieves a linear characteristic response and high sensitivity. MIM consists of a circular clamped-edges gold membrane suspended over sealed cavity on the upper metal surface which is placed on the silicon substrate. The proposed MEMS capacitive pressure sensor is optimised and designed in COMSOL Multiphysics. The sensor illustrated with a proof mass 140 μm diameter, with air gap from 0.15 to 2 μm and pressure ranging from 200 to 1500Mpa.
Vorheriger Artikel Minimal microfabrication required digital microfluidic system toward point-of-care nucleic acid amplification test application for developing countries
Nächster Artikel A compact broadband GFET based rectenna for RF energy harvesting applications

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Literatur
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Metadaten
Titel
Design and simulation of MEMS based capacitive pressure sensor for harsh environment
verfasst von
K. Srinivasa Rao
B. Mohitha reddy
V. Bala Teja
G. V. S. Krishnateja
P. Ashok Kumar
K. S. Ramesh
Publikationsdatum
20.01.2020
Verlag
Springer Berlin Heidelberg
Erschienen in
Microsystem Technologies / Ausgabe 6/2020
Print ISSN: 0946-7076
Elektronische ISSN: 1432-1858
DOI
https://doi.org/10.1007/s00542-019-04735-2

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