Development of n-type microcrystalline SiO_x:H films and its application by innovative way to improve the performance of single junction µc-Si:H solar cell

Light trapping is one of the fundamental necessities of thin film based solar cell for its performance elevation. Back reflection of unused light of first pass is the key way to improve the light trapping phenomena. In this study we have reported the development of n-type hydrogenated microcrystalline silicon oxide (n-µc-SiO:H) layers of different characteristics. The deposition has been done by Plasma Enhanced Chemical Vapor Deposition (PECVD) technique. The detailed characterization of the films include the following: (1) electrical properties (2) optical properties like E₀₄ (3) structural studies which include crystalline fraction by Raman spectroscopy and grain size by X-ray diffraction measurement, FTIR spectroscopy, AFM and TEM studies. n-µc-SiO:H layer has been introduced as the n-layer of single junction p–i–n structure µc-Si solar cells. By various techniques the optimum use of n-µc-SiO:H layer for enhancing the performance of µc-Si:H solar cells has been done. It has been found that by using suitable bilayer of two different n-µc-SiO:H layers, it is possible to increase the solar cell performances. The maximum efficiency obtained without any back reflector is 8.44% that is about 8.9% higher than that obtained by using n-µc-Si:H layer as n-layer in the solar cells.