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Erschienen in:
01.01.2012
Dielectric relaxation in complex perovskite Ba(Bi1/2Ta1/2)O3
Erschienen in: Journal of Materials Science: Materials in Electronics | Ausgabe 1/2012
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Abstract
A new lead-free perovskite Ba(Bi1/2Ta1/2)O3 was prepared by conventional ceramic fabrication technique at 1,200 °C/4 h in air atmosphere. The crystal symmetry, space group and unit cell dimensions were determined from the experimental results using FullProf software. The crystallite size and lattice strain were estimated from Williamson-Hall approach. XRD analysis of the compound indicated the formation of a single-phase cubic structure with the space group Pm3m. EDAX and SEM studies were carried out in order to evaluate the quality and purity of the compound. Permittivity data showed a low temperature coefficient of capacitance (T
CC
< 4%) up to +125 °C. Complex impedance analyses suggested the dielectric relaxation to be of non-Debye type. Electric modulus studies supported the hopping type of conduction in Ba(Bi1/2Ta1/2)O3.