Skip to main content
Erschienen in: Journal of Materials Science 16/2014

01.08.2014

Doping-induced electron density modification at lattice sites of ZnO:Ga nanostructures: effects on vibrational and optical properties

verfasst von: S. Saravanakumar, A. Escobedo-Morales, U. Pal, R. J. Aranda, R. Saravanan

Erschienen in: Journal of Materials Science | Ausgabe 16/2014

Einloggen

Aktivieren Sie unsere intelligente Suche, um passende Fachinhalte oder Patente zu finden.

search-config
loading …

Abstract

Effects of Ga doping on the morphology, microstructure, electron density distribution, and optical properties of hydrothermally grown ZnO nanostructures have been studied by means of scanning electron microscopy, diffuse reflectance spectroscopy, X-ray diffraction, and the maximum entropy methods. It has been shown that while Ga incorporation in ZnO lattice does not result in a large distortion of its wurtzite structure, it affects substantially the electronic charge distribution along the Zn–O bonds. Anisotropic redistribution of the electron charge density around the cation sites consolidates the assumption that the Ga atoms in doped nanostructures incorporate by substituting Zn atoms. The formation of a high density of point defects modifies the lattice dynamics of ZnO; in addition, it introduces a pronounced band-tail in the forbidden band gap.

Sie haben noch keine Lizenz? Dann Informieren Sie sich jetzt über unsere Produkte:

Springer Professional "Wirtschaft+Technik"

Online-Abonnement

Mit Springer Professional "Wirtschaft+Technik" erhalten Sie Zugriff auf:

  • über 102.000 Bücher
  • über 537 Zeitschriften

aus folgenden Fachgebieten:

  • Automobil + Motoren
  • Bauwesen + Immobilien
  • Business IT + Informatik
  • Elektrotechnik + Elektronik
  • Energie + Nachhaltigkeit
  • Finance + Banking
  • Management + Führung
  • Marketing + Vertrieb
  • Maschinenbau + Werkstoffe
  • Versicherung + Risiko

Jetzt Wissensvorsprung sichern!

Springer Professional "Technik"

Online-Abonnement

Mit Springer Professional "Technik" erhalten Sie Zugriff auf:

  • über 67.000 Bücher
  • über 390 Zeitschriften

aus folgenden Fachgebieten:

  • Automobil + Motoren
  • Bauwesen + Immobilien
  • Business IT + Informatik
  • Elektrotechnik + Elektronik
  • Energie + Nachhaltigkeit
  • Maschinenbau + Werkstoffe




 

Jetzt Wissensvorsprung sichern!

Literatur
1.
Zurück zum Zitat Hong CS, Park HH, Moon J, Park HH (2006) Effect of metal (Al, Ga, and In)-dopants and/or Ag-nanoparticles on the optical and electrical properties of ZnO thin films. Thin Solid Films 515:957–960CrossRef Hong CS, Park HH, Moon J, Park HH (2006) Effect of metal (Al, Ga, and In)-dopants and/or Ag-nanoparticles on the optical and electrical properties of ZnO thin films. Thin Solid Films 515:957–960CrossRef
2.
Zurück zum Zitat Bethke S, Pan H, Wessels B (1988) Luminescence of heteroepitaxial zinc oxide. Appl Phys Lett 52:138–140CrossRef Bethke S, Pan H, Wessels B (1988) Luminescence of heteroepitaxial zinc oxide. Appl Phys Lett 52:138–140CrossRef
3.
Zurück zum Zitat Choopun S, Vispute RD, Woch W, Balsamo A, Sharma RP, Venkatesan T, Iliadis A, Look DC (1999) Oxygen Pressure-tuned epitaxy and optoelectronic properties of laser-deposited ZnO films on sapphire. Appl Phys Lett 75:3947–3949CrossRef Choopun S, Vispute RD, Woch W, Balsamo A, Sharma RP, Venkatesan T, Iliadis A, Look DC (1999) Oxygen Pressure-tuned epitaxy and optoelectronic properties of laser-deposited ZnO films on sapphire. Appl Phys Lett 75:3947–3949CrossRef
4.
Zurück zum Zitat Wenas WW, Yamada A, Takahashi K, Yoshino M, Konagai M (1991) Electrical and optical properties of boron-doped ZnO thin films for solar cells grown by metal organic chemical vapor deposition. J Appl Phys 70:7119–7123CrossRef Wenas WW, Yamada A, Takahashi K, Yoshino M, Konagai M (1991) Electrical and optical properties of boron-doped ZnO thin films for solar cells grown by metal organic chemical vapor deposition. J Appl Phys 70:7119–7123CrossRef
5.
Zurück zum Zitat Agura H, Suzuki A, Matsushita T, Aoki T, Okuda M (2003) Low resistivity transparent conducting Al-doped ZnO films prepared by pulsed laser deposition. Thin Solid Films 445:263–267CrossRef Agura H, Suzuki A, Matsushita T, Aoki T, Okuda M (2003) Low resistivity transparent conducting Al-doped ZnO films prepared by pulsed laser deposition. Thin Solid Films 445:263–267CrossRef
6.
Zurück zum Zitat Ko HJ, Chen YF, Hong SK, Wenisch H, Yao T, Look DC (2000) Ga-doped ZnO films grown on GaN templates by plasma-assisted molecular-beam epitaxy. Appl Phys Lett 77:3761–3763CrossRef Ko HJ, Chen YF, Hong SK, Wenisch H, Yao T, Look DC (2000) Ga-doped ZnO films grown on GaN templates by plasma-assisted molecular-beam epitaxy. Appl Phys Lett 77:3761–3763CrossRef
7.
Zurück zum Zitat Hu J, Gordon RG (1993) Electrical and optical properties of indium doped zinc oxide films prepared by atmospheric pressure chemical vapor deposition. Mater Res Soc Symp Proc 283:891–896CrossRef Hu J, Gordon RG (1993) Electrical and optical properties of indium doped zinc oxide films prepared by atmospheric pressure chemical vapor deposition. Mater Res Soc Symp Proc 283:891–896CrossRef
8.
Zurück zum Zitat Minami T (2005) Transparent conducting oxide semiconductors for transparent electrodes. Semicond Sci Technol 20:S35–S44CrossRef Minami T (2005) Transparent conducting oxide semiconductors for transparent electrodes. Semicond Sci Technol 20:S35–S44CrossRef
9.
Zurück zum Zitat Gabás M, Landa-Cánovas A, Costa-Krämer J, Agulló-Rueda F, González-Elipe AR, Díaz-Carrascp P, Hernández-Moro J, Lorite I, Herrero P, Castillero P, Barranco A, Ramon Ramos-Barrado J (2013) Differences in n-type doping efficiency between Al– and Ga–ZnO films. J Appl Phys 113:9–163709CrossRef Gabás M, Landa-Cánovas A, Costa-Krämer J, Agulló-Rueda F, González-Elipe AR, Díaz-Carrascp P, Hernández-Moro J, Lorite I, Herrero P, Castillero P, Barranco A, Ramon Ramos-Barrado J (2013) Differences in n-type doping efficiency between Al– and Ga–ZnO films. J Appl Phys 113:9–163709CrossRef
10.
Zurück zum Zitat Xu C, Kim M, Chun J, Kim D (2005) Growth of Ga-doped ZnO nanowires by two-step vapor phase method. Appl Phys Lett 86:3–133107 Xu C, Kim M, Chun J, Kim D (2005) Growth of Ga-doped ZnO nanowires by two-step vapor phase method. Appl Phys Lett 86:3–133107
11.
Zurück zum Zitat Özgür Ü, Hofstetter D, Morkoc H (2010) ZnO devices and applications: a review of current status and future prospects. Proc IEEE 98:1255–1268CrossRef Özgür Ü, Hofstetter D, Morkoc H (2010) ZnO devices and applications: a review of current status and future prospects. Proc IEEE 98:1255–1268CrossRef
12.
Zurück zum Zitat Ahmad M, Zhu J (2011) ZnO based advanced functional nanostructures: synthesis, properties and applications. J Mater Chem 21:599–614CrossRef Ahmad M, Zhu J (2011) ZnO based advanced functional nanostructures: synthesis, properties and applications. J Mater Chem 21:599–614CrossRef
13.
Zurück zum Zitat Djurišić AB, Chen XY, Leung YH, Ng AMC (2012) ZnO nanostructures: growth, properties and applications. J Mater Chem 22:6526–6535CrossRef Djurišić AB, Chen XY, Leung YH, Ng AMC (2012) ZnO nanostructures: growth, properties and applications. J Mater Chem 22:6526–6535CrossRef
14.
Zurück zum Zitat Rietveld HM (1969) A profile refinement method for nuclear and magnetic structures. J Appl Crystallogr 2:65–71CrossRef Rietveld HM (1969) A profile refinement method for nuclear and magnetic structures. J Appl Crystallogr 2:65–71CrossRef
15.
Zurück zum Zitat McCusker LB, Von Dreele RB, Cox DE, Loüer D, Scardi P (1999) Rietveld refinement guidelines. J Appl Crystallogr 32:36–50CrossRef McCusker LB, Von Dreele RB, Cox DE, Loüer D, Scardi P (1999) Rietveld refinement guidelines. J Appl Crystallogr 32:36–50CrossRef
16.
Zurück zum Zitat Kumazawa S, Kubota Y, Takata M, Sakata M, Ishibashi Y (1993) MEED: a program package for electron density distribution calculation by the maximum entropy method. J Appl Crystallogr 26:453–457CrossRef Kumazawa S, Kubota Y, Takata M, Sakata M, Ishibashi Y (1993) MEED: a program package for electron density distribution calculation by the maximum entropy method. J Appl Crystallogr 26:453–457CrossRef
17.
Zurück zum Zitat Pineda-Hernandez G, Escobedo-Morales A, Pal U, Chigo-Anota E (2012) Morphology evolution of hydrothermally grown ZnO nanostructures on gallium doping and their defect structures. Mater Chem Phys 135:810–817CrossRef Pineda-Hernandez G, Escobedo-Morales A, Pal U, Chigo-Anota E (2012) Morphology evolution of hydrothermally grown ZnO nanostructures on gallium doping and their defect structures. Mater Chem Phys 135:810–817CrossRef
18.
Zurück zum Zitat West AR (1984) Solid state chemistry and its applications. Wiley, Great Britain West AR (1984) Solid state chemistry and its applications. Wiley, Great Britain
19.
Zurück zum Zitat ICDD (1997) Joint committee powder diffraction standards, Card No. 36-1451, version 1.30, Database of the international center for diffraction data, 12, campus boulevard, Newton square, Pennsylvania, 19073-3273, USA ICDD (1997) Joint committee powder diffraction standards, Card No. 36-1451, version 1.30, Database of the international center for diffraction data, 12, campus boulevard, Newton square, Pennsylvania, 19073-3273, USA
20.
Zurück zum Zitat Yoon MH, Lee SH, Park HL, Kim HK, Jang MS (2002) Solid solubility limits of Ga and Al in ZnO. J Mater Sci Lett 21:1703–1704CrossRef Yoon MH, Lee SH, Park HL, Kim HK, Jang MS (2002) Solid solubility limits of Ga and Al in ZnO. J Mater Sci Lett 21:1703–1704CrossRef
21.
Zurück zum Zitat Wang R, Sleight AW, Cleary D (1996) High conductivity in Ga doped ZnO powders. Chem Mater 8:433–439CrossRef Wang R, Sleight AW, Cleary D (1996) High conductivity in Ga doped ZnO powders. Chem Mater 8:433–439CrossRef
22.
Zurück zum Zitat Petříček V, Dušek M, Palatinus L (2006) Jana 2006: The crystallographic computing system. Institute of Physics, Praha Petříček V, Dušek M, Palatinus L (2006) Jana 2006: The crystallographic computing system. Institute of Physics, Praha
23.
Zurück zum Zitat Hahn T (2005) International tables for crystallography. Space group symmetry, vol A. Springer, The Netherlands Hahn T (2005) International tables for crystallography. Space group symmetry, vol A. Springer, The Netherlands
24.
Zurück zum Zitat Özgür Ü, Alivov YI, Liu C, Teke A, Reshchikov MA, Dogan S, Avrutin V, Cho SJ, Morkoc H (2005) A comprehensive review of ZnO materials and devices. J Appl Phys 98:103–041301CrossRef Özgür Ü, Alivov YI, Liu C, Teke A, Reshchikov MA, Dogan S, Avrutin V, Cho SJ, Morkoc H (2005) A comprehensive review of ZnO materials and devices. J Appl Phys 98:103–041301CrossRef
25.
Zurück zum Zitat Sheu JK, Shu KW, Lee ML, Tun CJ, Chi GC (2007) Effect of thermal annealing on Ga-doped ZnO films prepared by magnetron sputtering. J Electrochem Soc 154:H521–H524CrossRef Sheu JK, Shu KW, Lee ML, Tun CJ, Chi GC (2007) Effect of thermal annealing on Ga-doped ZnO films prepared by magnetron sputtering. J Electrochem Soc 154:H521–H524CrossRef
26.
Zurück zum Zitat Saravanan R (2008) Grain software. Private communication Saravanan R (2008) Grain software. Private communication
27.
Zurück zum Zitat Guinier A (1994) X-ray diffraction in crystals, imperfect crystals and amorphous bodies. Dover Publications, New York Guinier A (1994) X-ray diffraction in crystals, imperfect crystals and amorphous bodies. Dover Publications, New York
28.
Zurück zum Zitat Izumi F, Dilanian RA (2002) Recent research developments in physics, Part II, vol 3. Transworld Research Network, Trivandrum Izumi F, Dilanian RA (2002) Recent research developments in physics, Part II, vol 3. Transworld Research Network, Trivandrum
29.
Zurück zum Zitat Momma K, Izumi F (2011) VESTA 3 for three-dimensional visualization of crystal, volumetric and morphology data. J Appl Crystallogr 44:1272–1276CrossRef Momma K, Izumi F (2011) VESTA 3 for three-dimensional visualization of crystal, volumetric and morphology data. J Appl Crystallogr 44:1272–1276CrossRef
30.
Zurück zum Zitat Hardcastle FD, Wachs IE (1991) Determination of vanadium–oxygen bond distances and bond orders by Raman spectroscopy. J Phys Chem 95:5031–5041CrossRef Hardcastle FD, Wachs IE (1991) Determination of vanadium–oxygen bond distances and bond orders by Raman spectroscopy. J Phys Chem 95:5031–5041CrossRef
31.
Zurück zum Zitat Dong S, Padmakumar R, Banerjee R, Spiro TG (1996) Resonance Raman Co–C stretching frequencies reflect bond strength changes in alkyl cobalamins, but are unaffected by trans-ligand substitution. J Am Chem Soc 118:9182–9183CrossRef Dong S, Padmakumar R, Banerjee R, Spiro TG (1996) Resonance Raman Co–C stretching frequencies reflect bond strength changes in alkyl cobalamins, but are unaffected by trans-ligand substitution. J Am Chem Soc 118:9182–9183CrossRef
32.
Zurück zum Zitat Bundesmann C, Ashkenov N, Schubert M, Spemann D, Butz T, Kaidashev EM, Lorenz M, Grundmann M (2003) Raman scattering in ZnO thin films doped with Fe, Sb, Al, Ga and Li. Appl Phys Lett 83:1974–1976CrossRef Bundesmann C, Ashkenov N, Schubert M, Spemann D, Butz T, Kaidashev EM, Lorenz M, Grundmann M (2003) Raman scattering in ZnO thin films doped with Fe, Sb, Al, Ga and Li. Appl Phys Lett 83:1974–1976CrossRef
33.
Zurück zum Zitat Wang X, Xu J, Yu X, Xue K, Yu J, Zhao X (2007) Structural evidence of secondary phase segregation from the Raman vibrational modes in Zn1−xCoxO (0 < x < 0.6). Appl Phys Lett 91:3–031908 Wang X, Xu J, Yu X, Xue K, Yu J, Zhao X (2007) Structural evidence of secondary phase segregation from the Raman vibrational modes in Zn1−xCoxO (0 < x < 0.6). Appl Phys Lett 91:3–031908
34.
Zurück zum Zitat Windisch CF, Exarhos GJ, Owings RR (2004) Vibrational spectroscopic study of the site occupancy distribution of cations in nickel cobalt oxides. J Appl Phys 95:5435–5442CrossRef Windisch CF, Exarhos GJ, Owings RR (2004) Vibrational spectroscopic study of the site occupancy distribution of cations in nickel cobalt oxides. J Appl Phys 95:5435–5442CrossRef
35.
Zurück zum Zitat Holland TJB, Redfern SAT (1997) Unit cell refinement from powder diffraction data: the use of regression diagnostics. Mineral Mag 61:65–77CrossRef Holland TJB, Redfern SAT (1997) Unit cell refinement from powder diffraction data: the use of regression diagnostics. Mineral Mag 61:65–77CrossRef
36.
Zurück zum Zitat Escobedo-Morales A, Sánchez Mora E, Pal U (2007) Use of diffuse reflectance spectroscopy for optical characterization of un-supported nanostructures. Rev Mex Fis S53:18–22 Escobedo-Morales A, Sánchez Mora E, Pal U (2007) Use of diffuse reflectance spectroscopy for optical characterization of un-supported nanostructures. Rev Mex Fis S53:18–22
37.
Zurück zum Zitat Halperin BI, Lax M (1966) Impurity-band tails in the high-density limit. I. Minimum counting methods. Phys Rev 148:722–740CrossRef Halperin BI, Lax M (1966) Impurity-band tails in the high-density limit. I. Minimum counting methods. Phys Rev 148:722–740CrossRef
38.
Zurück zum Zitat Burstein E (1954) Anomalous optical absorption limit in InSb. Phys Rev 93:632–633CrossRef Burstein E (1954) Anomalous optical absorption limit in InSb. Phys Rev 93:632–633CrossRef
39.
Zurück zum Zitat Moss TS (1954) The interpretation of the properties of indium antimonide. Proc Phys Soc London B 76:775–782CrossRef Moss TS (1954) The interpretation of the properties of indium antimonide. Proc Phys Soc London B 76:775–782CrossRef
40.
Zurück zum Zitat Wang R, King LLH, Sleight AW (1996) Highly conducting transparent thin films based on zinc oxide. J Mater Res 11:1659–1664CrossRef Wang R, King LLH, Sleight AW (1996) Highly conducting transparent thin films based on zinc oxide. J Mater Res 11:1659–1664CrossRef
41.
Zurück zum Zitat Iribarren A, Castro-Rodríguez R, Sosa V, Peña JL (1998) Band-tail parameter modeling in semiconductor materials. Phys Rev B 58:1907–1911CrossRef Iribarren A, Castro-Rodríguez R, Sosa V, Peña JL (1998) Band-tail parameter modeling in semiconductor materials. Phys Rev B 58:1907–1911CrossRef
Metadaten
Titel
Doping-induced electron density modification at lattice sites of ZnO:Ga nanostructures: effects on vibrational and optical properties
verfasst von
S. Saravanakumar
A. Escobedo-Morales
U. Pal
R. J. Aranda
R. Saravanan
Publikationsdatum
01.08.2014
Verlag
Springer US
Erschienen in
Journal of Materials Science / Ausgabe 16/2014
Print ISSN: 0022-2461
Elektronische ISSN: 1573-4803
DOI
https://doi.org/10.1007/s10853-014-8242-z

Weitere Artikel der Ausgabe 16/2014

Journal of Materials Science 16/2014 Zur Ausgabe

    Marktübersichten

    Die im Laufe eines Jahres in der „adhäsion“ veröffentlichten Marktübersichten helfen Anwendern verschiedenster Branchen, sich einen gezielten Überblick über Lieferantenangebote zu verschaffen.