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2017 | OriginalPaper | Buchkapitel

13. Drift Effects in GaN High-Voltage Power Transistors

verfasst von : Joachim Würfl

Erschienen in: Power GaN Devices

Verlag: Springer International Publishing

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Abstract

Drift effects in semiconductors are changing electrical device properties in dependence on their electrical, thermal and other treatments. In a similar manner as degradation effects they are adversely influencing device performance. However, in contrast to degradation, drift effects are fully recoverable. This means that device performance can be brought back to its initial property by certain treatments such as device biasing at specific conditions, light exposure by heating up the un-biased device or by combining these procedures. The knowledge on device drift effects is imperative for predicting device performance in real system environment. This chapter provides an overview on drift effects in GaN power switching devices, describes the physical background and discusses proven technological concepts to minimize device drift.

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Titel: Drift Effects in GaN High-Voltage Power Transistors
verfasst von: Joachim Würfl
Verlag: Springer International Publishing
Buch: Power GaN Devices
Print ISBN: 978-3-319-43197-0

Electronic ISBN: 978-3-319-43199-4

Copyright-Jahr: 2017
DOI: https://doi.org/10.1007/978-3-319-43199-4_13