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2017 | OriginalPaper | Buchkapitel

14. Reliability Aspects of 650-V-Rated GaN Power Devices

verfasst von : Peter Moens, Aurore Constant, Abhishek Banerjee

Erschienen in: Power GaN Devices

Verlag: Springer International Publishing

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Abstract

GaN devices are promising candidates for the next generation power devices for energy efficient applications. Although astounding performance is already proven by many research papers, the widespread adoption of GaN power devices in the market is still hampered by (1) yield and reproducibility; (2) cost; (3) reliability.

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Titel: Reliability Aspects of 650-V-Rated GaN Power Devices
verfasst von: Peter Moens
Aurore Constant
Abhishek Banerjee
Verlag: Springer International Publishing
Buch: Power GaN Devices
Print ISBN: 978-3-319-43197-0

Electronic ISBN: 978-3-319-43199-4

Copyright-Jahr: 2017
DOI: https://doi.org/10.1007/978-3-319-43199-4_14