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Erschienen in:
10.06.2016
Effect of Ar/(Ar+O2) ratio on the microstructures and dielectric properties of Zn2SnO4 thin films by RF magnetron sputtering
Erschienen in: Journal of Materials Science: Materials in Electronics | Ausgabe 10/2016
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Abstract
The microstructures and dielectric properties of Zn2SnO4 thin films were investigated. Zn2SnO4 thin films were prepared using the radio frequency magnetron sputtering with various Ar/(Ar+O2) ratios. When the Ar/(Ar+O2) ratio was increased from 0.4 to 0.8, the grain size became larger gradually. The thickness and surface roughness of Zn2SnO4 thin films increased as the Ar/(Ar+O2) ratio increased from 0.4 to 0.8. Dielectric constants (\(\varepsilon_{r}\)) of 15–25 and loss factor of 0.42–0.44 of Zn2SnO4 thin films were measured at 1 MHz with Ar/(Ar+O2) ratio in the range of 0.4–0.8.