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Journal of Materials Science: Materials in Electronics

Erschienen in:

11.04.2020

Effect of bismuth and vanadium as the varistor forming element in ZnO-based ceramics

verfasst von: Ming Zhao, Yu-hang Wang, Ting-ting Sun, Huan-huan Song

Erschienen in: Journal of Materials Science: Materials in Electronics | Ausgabe 11/2020

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Abstract

This paper focuses on the difference between Bi and V as the varistor forming element (VFE) in ZnO-based ceramics. For this purpose, the density, microstructure and electrical properties of ZnBiMnNbO and ZnVMnNbO varistor ceramics sintered at 900 °C for 3 h were compared. Besides having a higher density and a smaller grain size, the Bi-containing varistor ceramic has Bi₂O₃, Bi₅Nb₃O₁₅ and ZnMnO₃, as its secondary phases in comparison with ZnV₂O₄, Zn₃(VO₄)₂ and ZnMn₂O₄ in the V-containing one. The nonlinear coefficients (α) over 0.1–1 and 1–10 mA/cm² ranges, breakdown field (E_B) and leakage density (J_L) of Bi-containing ceramic are 31.38, 27.33, 576.75 V/mm and 3.75 µA/cm², respectively. Those of its V-containing counterpart are 4.99, 23.53, 440.00 V/mm and 281.00 µA/cm². These results suggest Bi is more effective than V on acting as the VFE in ZnO-based ceramics.

Vorheriger Artikel Influence of divalent metals (Zn, Cu and Co) on the synthesis and magnetic properties of spinel ferrite nanopowders

Nächster Artikel Synthesis of CuO-distributed carbon nanofiber: Alternative hybrid for solid propellants

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Titel: Effect of bismuth and vanadium as the varistor forming element in ZnO-based ceramics
verfasst von: Ming Zhao
Yu-hang Wang
Ting-ting Sun
Huan-huan Song
Publikationsdatum: 11.04.2020
Verlag: Springer US
Erschienen in: Journal of Materials Science: Materials in Electronics / Ausgabe 11/2020
Print ISSN: 0957-4522
Elektronische ISSN: 1573-482X
DOI: https://doi.org/10.1007/s10854-020-03355-1

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