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Journal of Electronic Materials
Erschienen in: Journal of Electronic Materials 12/2023

08.10.2023 | Original Research Article

Effect of Grain Size on Resistivity and Voltage-Dependent Dynamic Conductance in Nano-crystalline Nd\(_{0.6}\)Sr\(_{0.4}\)CoO\(_3\)

verfasst von: Pritish Paul, Arindam Midya, Subal Chandra De, Moumita Patra

Erschienen in: Journal of Electronic Materials | Ausgabe 12/2023

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Abstract

The resistivity behaviour and voltage-dependent dynamic conductance of Nd\(_{0.6}\)Sr\(_{0.4}\)CoO\(_3\) nanomaterials were studied with respect to two different grain sizes (\(\sim \) 55 nm and \(\sim \) 140 nm). Three distinct regions were observed in the temperature-dependent resistivity (\(\rho -T\)) graph. An upturn in the\(\rho -T\) curve was observed below 100 K, which was enhanced with decreasing grain size. This enhancement was investigated, and the analysis suggests that electron–electron interaction plays a key role. We probed the transport mechanism using the isothermal current–voltage (I–V) characteristics. Non-linear dynamic conductance was found for both samples. A temperature-dependent non-linear exponent suggests three types of current transport mechanisms. A voltage-driven crossover from inelastic tunnelling via localized states to direct elastic tunnelling through the grain boundary was observed around the critical region for metal insulator transition.
Vorheriger Artikel Improvement of Magnetocaloric Effects and Study of Magneto-Transport Behavior of Lanthanum Strontium Manganites by Grain Boundary Management via Additives
Nächster Artikel Analyses of Electrical Transport Properties of p-Type Cu2GeSe3 Taking into Account Hopping Conduction Mechanisms

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Metadaten
Titel
Effect of Grain Size on Resistivity and Voltage-Dependent Dynamic Conductance in Nano-crystalline NdSrCoO
verfasst von
Pritish Paul
Arindam Midya
Subal Chandra De
Moumita Patra
Publikationsdatum
08.10.2023
Verlag
Springer US
Erschienen in
Journal of Electronic Materials / Ausgabe 12/2023
Print ISSN: 0361-5235
Elektronische ISSN: 1543-186X
DOI
https://doi.org/10.1007/s11664-023-10751-w

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