Introduction Rates of Electrically Active Radiation Defects in Proton Irradiated n-Type and p-Type Si Monocrystals

The introduction rates of electrically active radiation defects \(\Delta N_{{{\text{def}}}} /\Delta \Phi\) were studied as a function of 15.5 MeV energy proton radiation fluence \(\left( \Phi \right)\) in n-type and p-type Si semiconductor crystals. The concentration of electrically active radiation defects \( N_{{{\text{def}}}}\) was determined as the difference between the charge carrier concentration before \(n_{0}\) and after \(n\left( \Phi \right) \) irradiation, at room temperature. It was demonstrated that the concentration of electrically active radiation defects in silicon crystals produced by proton irradiation can be described by an empirical exponential function. The experimental results show that the introduction rate of electrically active radiation defects depends on the initial sample parameters, and during the initial phase of irradiation by protons it is significantly higher than that for 3.5 MeV energy electron irradiation. It was shown that samples with a low introduction rate of radiation defects are more resistant to the effects of particle irradiation. The charge carrier mobility in both n-type and p-type silicon crystals changes slightly as a result of proton irradiation, in contrast to the significant decreases observed under conditions of electron irradiation. In the case of proton irradiation, the resistivity of n-type and p-type silicon crystals increases exponentially with the level of radiation fluence.