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Erschienen in: Journal of Materials Science: Materials in Electronics 2/2020

05.12.2019

Effect of La doping on structure and dielectric properties of PLZST antiferroelectric ceramics

verfasst von: Yucheng Liu, Tongqing Yang, Hongsheng Wang

Erschienen in: Journal of Materials Science: Materials in Electronics | Ausgabe 2/2020

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Abstract

For the ABO3 perovskite structure in PZT-based antiferroelectrics, the cations with different radii at A or B position will affect the phase structure of the material. In this paper, the effect of La on the phase structure, dielectric property and field-induced phase transformation of PZT-based ceramics was studied by replacing Pb2+ with smaller ions La3+ with the formula of (Pb1−3x/200Lax/100)(Zr0.75Sn0.16Ti0.09)O3 ceramics (x = 0, 2, 4 and 6) and all samples were prepared through conventional solid-phase reaction sintering. It was found that the samples were ferroelectric rhombohedral phase with x = 0 and turned into an antiferroelectric tetragonal phase with increasing La content. Higher forward/backward switching fields and smaller hysteresis were achieved with increasing La content. The results also indicated proper content of La could effectively enhance the stability of antiferroelectric in this PZT-based antiferroelectric. Furthermore, the released energy density and energy storage efficiency were improved as the La content increased, reaching a maximum of 3.45 J/cm3 and efficiency of 91.3% when x = 0.06. It can be reasonably concluded that La doping can tailor the electric properties in PZT-based energy storage materials. For L4, as the field strength approaches the switching field, the Imax/E and the released charge also increase significantly.

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Metadaten
Titel
Effect of La doping on structure and dielectric properties of PLZST antiferroelectric ceramics
verfasst von
Yucheng Liu
Tongqing Yang
Hongsheng Wang
Publikationsdatum
05.12.2019
Verlag
Springer US
Erschienen in
Journal of Materials Science: Materials in Electronics / Ausgabe 2/2020
Print ISSN: 0957-4522
Elektronische ISSN: 1573-482X
DOI
https://doi.org/10.1007/s10854-019-02666-2

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