Skip to main content
Erschienen in: Microsystem Technologies 2/2016

14.01.2015 | Technical Paper

Effect of localized KrF excimer laser treatment on fracture behaviors of freestanding <110> and <100> single crystal silicon beams

verfasst von: M. Elwi Mitwally, T. Tsuchiya, O. Tabata, S. Sedky

Erschienen in: Microsystem Technologies | Ausgabe 2/2016

Einloggen

Aktivieren Sie unsere intelligente Suche, um passende Fachinhalte oder Patente zu finden.

search-config
loading …

Abstract

Microscale silicon structures oriented along <100> and <110> orientations were laser treated with different conditions with the cross section shape and tensile strength investigated after the treatment. Finite element simulation was performed to examine the temperature distribution at different conditions during laser treatment. Using a low energy (1.2 J/cm2) and high tilt angle (65°) led to a more preserved cross section with a slight strength improvement. The strength improvement was limited due to other surfaces that were not affected by laser treatment. An improvement of 30 % in tensile strength was achieved with a higher energy (4 J/cm2) lower tilt angle (45°) treatment that was consistent for different sample orientations. The cross section of the samples treated at such condition was significantly changed however. The effect of sample orientation on fracture behaviour was studied and unstable crack propagation was observed for <100> oriented samples that was more significant after laser treatment.

Sie haben noch keine Lizenz? Dann Informieren Sie sich jetzt über unsere Produkte:

Springer Professional "Wirtschaft+Technik"

Online-Abonnement

Mit Springer Professional "Wirtschaft+Technik" erhalten Sie Zugriff auf:

  • über 102.000 Bücher
  • über 537 Zeitschriften

aus folgenden Fachgebieten:

  • Automobil + Motoren
  • Bauwesen + Immobilien
  • Business IT + Informatik
  • Elektrotechnik + Elektronik
  • Energie + Nachhaltigkeit
  • Finance + Banking
  • Management + Führung
  • Marketing + Vertrieb
  • Maschinenbau + Werkstoffe
  • Versicherung + Risiko

Jetzt Wissensvorsprung sichern!

Springer Professional "Technik"

Online-Abonnement

Mit Springer Professional "Technik" erhalten Sie Zugriff auf:

  • über 67.000 Bücher
  • über 390 Zeitschriften

aus folgenden Fachgebieten:

  • Automobil + Motoren
  • Bauwesen + Immobilien
  • Business IT + Informatik
  • Elektrotechnik + Elektronik
  • Energie + Nachhaltigkeit
  • Maschinenbau + Werkstoffe




 

Jetzt Wissensvorsprung sichern!

Literatur
Zurück zum Zitat Ando T, Sato K, Shikida M, Yoshioka T, Yoshikawa Y, Kawabata T (1997) Orientation-dependent fracture strain in single-crystal silicon beams under uniaxial tensile conditions. In: Proceedings of the 8th IEEE international symposium on micromechatronics and human science, pp 55–60 Ando T, Sato K, Shikida M, Yoshioka T, Yoshikawa Y, Kawabata T (1997) Orientation-dependent fracture strain in single-crystal silicon beams under uniaxial tensile conditions. In: Proceedings of the 8th IEEE international symposium on micromechatronics and human science, pp 55–60 
Zurück zum Zitat Ando T, Li X, Nakao S, Kasai T, Shikida M, Sato K (2004) Effect of crystal orientation on fracture strength and fracture toughness of single crystal silicon. In: Proceedings of the 17th IEEE international conference on Microelectromechanical systems , pp 177–180 Ando T, Li X, Nakao S, Kasai T, Shikida M, Sato K (2004) Effect of crystal orientation on fracture strength and fracture toughness of single crystal silicon. In: Proceedings of the 17th IEEE international conference on Microelectromechanical systems , pp 177–180
Zurück zum Zitat Dirscherl M, Esser G, Schmidt M (2006) Ultrashort pulse laser bending. J Laser Micro Nanoeng 1:54–60CrossRef Dirscherl M, Esser G, Schmidt M (2006) Ultrashort pulse laser bending. J Laser Micro Nanoeng 1:54–60CrossRef
Zurück zum Zitat Hung SC, Liang EZ, Lin CF (2009) Silicon waveguide sidewall smoothing by KrF excimer laser reformation. J Lightwave Technol 27:887–892CrossRef Hung SC, Liang EZ, Lin CF (2009) Silicon waveguide sidewall smoothing by KrF excimer laser reformation. J Lightwave Technol 27:887–892CrossRef
Zurück zum Zitat Izumi S, Kubodera Y, Sakai S, Miyajima H, Murakami K, Isokawa T (2007) Influence of ICP etching damage on the brittle-fracture strength of single-crystal silicon. Jpn J Soc Mater Sci 56:920–925CrossRef Izumi S, Kubodera Y, Sakai S, Miyajima H, Murakami K, Isokawa T (2007) Influence of ICP etching damage on the brittle-fracture strength of single-crystal silicon. Jpn J Soc Mater Sci 56:920–925CrossRef
Zurück zum Zitat Kim SG, Roh TM, Kim J, Park IY, Lee JW, Koo JG, Cho KI (2003) Behavior of trench surface by H2 annealing for reliable trench gate oxide. J Cryst Growth 255:123–129CrossRef Kim SG, Roh TM, Kim J, Park IY, Lee JW, Koo JG, Cho KI (2003) Behavior of trench surface by H2 annealing for reliable trench gate oxide. J Cryst Growth 255:123–129CrossRef
Zurück zum Zitat Lawn BR (1993) Fracture of brittle solids. Cambridge University Press, New YorkCrossRef Lawn BR (1993) Fracture of brittle solids. Cambridge University Press, New YorkCrossRef
Zurück zum Zitat Lee MCM, Wu MC (2006) Thermal annealing in hydrogen for 3-D profile transformation on silicon-on-insulator and sidewall roughness reduction. J Microelectromech S 15:338–343CrossRef Lee MCM, Wu MC (2006) Thermal annealing in hydrogen for 3-D profile transformation on silicon-on-insulator and sidewall roughness reduction. J Microelectromech S 15:338–343CrossRef
Zurück zum Zitat Lee CH, Jiang K, Davies GJ (2007) Sidewall roughness characterization and comparison between silicon and SU-8 microcomponents. Mater Charact 58:603–609CrossRef Lee CH, Jiang K, Davies GJ (2007) Sidewall roughness characterization and comparison between silicon and SU-8 microcomponents. Mater Charact 58:603–609CrossRef
Zurück zum Zitat Liang EZ, Hung SC, Hsieh YP, Lin CF (2008) Effective energy densities in KrF excimer laser reformation as a sidewall smoothing technique. J Vac Sci Technol B 26:110–116CrossRef Liang EZ, Hung SC, Hsieh YP, Lin CF (2008) Effective energy densities in KrF excimer laser reformation as a sidewall smoothing technique. J Vac Sci Technol B 26:110–116CrossRef
Zurück zum Zitat Lindroos V, Franssila S, Tilli M, Paulasto-Krockel M, Lehto A, Motooka T, Airaksinen VM (eds) (2009) Handbook of silicon based MEMS materials and technologies. Elsevier, Amsterdam Lindroos V, Franssila S, Tilli M, Paulasto-Krockel M, Lehto A, Motooka T, Airaksinen VM (eds) (2009) Handbook of silicon based MEMS materials and technologies. Elsevier, Amsterdam
Zurück zum Zitat Mitwally ME, Tsuchiya T, Tabata O, Sedky S (2014) Improvement of tensile strength of freestanding single crystal silicon microstructures using localized harsh laser treatment. Jpn J Appl Phy 53:06JM03-1–06JM03-06CrossRef Mitwally ME, Tsuchiya T, Tabata O, Sedky S (2014) Improvement of tensile strength of freestanding single crystal silicon microstructures using localized harsh laser treatment. Jpn J Appl Phy 53:06JM03-1–06JM03-06CrossRef
Zurück zum Zitat Namazu T, Isono Y, Tanaka T (2000) Evaluation of size effect on mechanical properties of single crystal silicon by nanoscale bending test using AFM. J Microelectromech S 9:450–459CrossRef Namazu T, Isono Y, Tanaka T (2000) Evaluation of size effect on mechanical properties of single crystal silicon by nanoscale bending test using AFM. J Microelectromech S 9:450–459CrossRef
Zurück zum Zitat Pierron ON, Muhlstein CL (2006) The critical role of environment in fatigue damage accumulation in deep-reactive ion-etched single-crystal silicon structural films. J Microelectromech S 15:111–119CrossRef Pierron ON, Muhlstein CL (2006) The critical role of environment in fatigue damage accumulation in deep-reactive ion-etched single-crystal silicon structural films. J Microelectromech S 15:111–119CrossRef
Zurück zum Zitat Rogers JW, Phinney LM (2001) Process yields for laser repair of aged, stiction-failed, MEMS devices. J Microelectromech S 10:280–285CrossRef Rogers JW, Phinney LM (2001) Process yields for laser repair of aged, stiction-failed, MEMS devices. J Microelectromech S 10:280–285CrossRef
Zurück zum Zitat Rogers JW, Phinney LM (2004) Temperature response of silicon MEMS cantilevers during and after Nd: YAG laser irradiation. Numer Heat Tr A Appl 45:737–750CrossRef Rogers JW, Phinney LM (2004) Temperature response of silicon MEMS cantilevers during and after Nd: YAG laser irradiation. Numer Heat Tr A Appl 45:737–750CrossRef
Zurück zum Zitat Shikida M, Hasegawa T, Hamaguchi K, Sato K (2013) Mechanical strengthening of Si cantilevers by chemical wet etching. Microsyst Technol 19:547–553CrossRef Shikida M, Hasegawa T, Hamaguchi K, Sato K (2013) Mechanical strengthening of Si cantilevers by chemical wet etching. Microsyst Technol 19:547–553CrossRef
Zurück zum Zitat Shikida M, Niimi Y, Hasegawa T, Sugino T, Hamaoka S, Fukuzawa K (2014) Mechanical strengthening of Si cantilever by chemical KOH etching and its surface analysis by TEM and AFM. Microsyst Technol. doi:10.1007/s00542-014-2075-1 Shikida M, Niimi Y, Hasegawa T, Sugino T, Hamaoka S, Fukuzawa K (2014) Mechanical strengthening of Si cantilever by chemical KOH etching and its surface analysis by TEM and AFM. Microsyst Technol. doi:10.​1007/​s00542-014-2075-1
Zurück zum Zitat Sparacin DK, Spector SJ, Kimerling LC (2005) Silicon waveguide sidewall smoothing by wet chemical oxidation. J Lightwave Technol 23:2455–2461CrossRef Sparacin DK, Spector SJ, Kimerling LC (2005) Silicon waveguide sidewall smoothing by wet chemical oxidation. J Lightwave Technol 23:2455–2461CrossRef
Zurück zum Zitat Takahashi JI, Tsuchizawa T, Watanabe T, Itabashi SI (2004) Oxidation-induced improvement in the sidewall morphology and cross-sectional profile of silicon wire waveguides. J Vac Sci Technol B 22:2522–2525CrossRef Takahashi JI, Tsuchizawa T, Watanabe T, Itabashi SI (2004) Oxidation-induced improvement in the sidewall morphology and cross-sectional profile of silicon wire waveguides. J Vac Sci Technol B 22:2522–2525CrossRef
Zurück zum Zitat Tsuchiya T, Tabata O, Sakata J, Taga Y (1998) Specimen size effect on tensile strength of surface-micromachined polycrystalline silicon thin films. J Microelectromech S 7:106–113CrossRef Tsuchiya T, Tabata O, Sakata J, Taga Y (1998) Specimen size effect on tensile strength of surface-micromachined polycrystalline silicon thin films. J Microelectromech S 7:106–113CrossRef
Zurück zum Zitat Uesugi A, Hirai Y, Sugano K, Tsuchiya T, Tabata O (2013) Effect of surface morphology and crystal orientations on fracture strength of thin film (110) single crystal silicon. In: Proceedings of the 17th international conference on solid-state sensors, actuators and microsystems (Transducers and Eurosensors XXVII), pp 1946–1949 Uesugi A, Hirai Y, Sugano K, Tsuchiya T, Tabata O (2013) Effect of surface morphology and crystal orientations on fracture strength of thin film (110) single crystal silicon. In: Proceedings of the 17th international conference on solid-state sensors, actuators and microsystems (Transducers and Eurosensors XXVII), pp 1946–1949
Zurück zum Zitat Yi T, Li L, Kim CJ (2000) Microscale material testing of single crystalline silicon: process effects on surface morphology and tensile strength. Sens Actuator A Phys 83:172–178CrossRef Yi T, Li L, Kim CJ (2000) Microscale material testing of single crystalline silicon: process effects on surface morphology and tensile strength. Sens Actuator A Phys 83:172–178CrossRef
Zurück zum Zitat Zhang XR, Xu X (2005) Laser bending for high-precision curvature adjustment of microcantilevers. Appl Phys Lett 86:021114CrossRef Zhang XR, Xu X (2005) Laser bending for high-precision curvature adjustment of microcantilevers. Appl Phys Lett 86:021114CrossRef
Metadaten
Titel
Effect of localized KrF excimer laser treatment on fracture behaviors of freestanding <110> and <100> single crystal silicon beams
verfasst von
M. Elwi Mitwally
T. Tsuchiya
O. Tabata
S. Sedky
Publikationsdatum
14.01.2015
Verlag
Springer Berlin Heidelberg
Erschienen in
Microsystem Technologies / Ausgabe 2/2016
Print ISSN: 0946-7076
Elektronische ISSN: 1432-1858
DOI
https://doi.org/10.1007/s00542-015-2419-5

Weitere Artikel der Ausgabe 2/2016

Microsystem Technologies 2/2016 Zur Ausgabe

Neuer Inhalt