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Erschienen in:
01.10.2007
Effect of LP-buffer on the structure of ZnO thin films prepared on glass substrate using RF magnetron sputtering
Erschienen in: Journal of Materials Science: Materials in Electronics | Ausgabe 10/2007
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Abstract
The ZnO thin films with preferential C-orientation and smooth surface have been prepared using an RF magnetron sputtering method by the insertion of low-power (LP) sputtered ZnO buffer. The XRD results show that the C-orientation of the ZnO buffer layer deposited under the RF power of 30 W is much better than that deposited under higher RF power. With the increase of the LP-buffer thickness, the C-orientation as well as the crystal quality of ZnO films improves, the surface becomes smooth and the RMS roughness decreases from 88.4 Å to 38.5 Å. The ZnO lattice is independent of the insertion of LP buffer.