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Erschienen in: Surface Engineering and Applied Electrochemistry 2/2023

01.04.2023

Effect of Manganese Atoms on the Magnetic Properties of Silicon

verfasst von: O. E. Sattarov, A. Mavlyanov, A. An

Erschienen in: Surface Engineering and Applied Electrochemistry | Ausgabe 2/2023

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Abstract

It has been shown that the state of manganese atoms in the silicon lattice can be controlled with a view to varying the state and pattern of the magnetoresistance of the material. The laws governing changes in the magnetoresistance of silicon with manganese atoms (single atoms and clusters) as a function of temperature, illumination, and electric field have been determined.

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Literatur
1.
Zurück zum Zitat Fistul’, V.I., Fizika i khimiya tverdogo tela (Physics and Chemistry of Solid State), Moscow: Metallurgiya, 1995, vol. 1. Fistul’, V.I., Fizika i khimiya tverdogo tela (Physics and Chemistry of Solid State), Moscow: Metallurgiya, 1995, vol. 1.
2.
Zurück zum Zitat Mil’vidskii, M.G. and Chaldyshev, V.V., Nano-sized atomic clusters in semiconductors—a new approach to the formation of material properties, Fiz. Tekh. Poluprovodn., 1998, vol. 32, no. 5, p. 513. Mil’vidskii, M.G. and Chaldyshev, V.V., Nano-sized atomic clusters in semiconductors—a new approach to the formation of material properties, Fiz. Tekh. Poluprovodn., 1998, vol. 32, no. 5, p. 513.
3.
Zurück zum Zitat Suzdalev, I.P., Nanotekhnologiya: Fiziko-khimiya nanoklasterov, nanostruktur i nanomaterialov (Nanotechnology: Physical Chemistry of Nanoclusters, Nanostructures and Nanomaterials), Moscow: Librokom, 2009. Suzdalev, I.P., Nanotekhnologiya: Fiziko-khimiya nanoklasterov, nanostruktur i nanomaterialov (Nanotechnology: Physical Chemistry of Nanoclusters, Nanostructures and Nanomaterials), Moscow: Librokom, 2009.
4.
Zurück zum Zitat Bakhadyrkhanov, M.K., Mavlonov, G.Kh., and Iliev, Kh.M., Control of the magnetic properties of silicon with manganese atom nanoclusters, Tekh. Phys., 2014, vol. 59, p. 1556. Bakhadyrkhanov, M.K., Mavlonov, G.Kh., and Iliev, Kh.M., Control of the magnetic properties of silicon with manganese atom nanoclusters, Tekh. Phys., 2014, vol. 59, p. 1556.
5.
Zurück zum Zitat Ludwig, G.W., Woodbury, H.H., and Carlson, R.O., Spin resonance of deep level impurities in germanium and silicon, J. Phys. Chem. Sol., 1959, vol. 8, p. 490.CrossRef Ludwig, G.W., Woodbury, H.H., and Carlson, R.O., Spin resonance of deep level impurities in germanium and silicon, J. Phys. Chem. Sol., 1959, vol. 8, p. 490.CrossRef
6.
Zurück zum Zitat Kreissl, J. and Gehlhoff, W., Electron paramagnetic resonance of the \({\text{Mn}}_{4}^{0}\) cluster in silicon, Phys. Stat. Sol. B, 1988, vol. 145, p. 609.CrossRef Kreissl, J. and Gehlhoff, W., Electron paramagnetic resonance of the \({\text{Mn}}_{4}^{0}\) cluster in silicon, Phys. Stat. Sol. B, 1988, vol. 145, p. 609.CrossRef
7.
Zurück zum Zitat Bakhadyrkhanov, M.K., Sattarov, O.E., Mavlonov, G.Kh., Iliev, Kh.M., et al., Photoconductivity of silicon with multicharged clusters of manganese atoms [Mn]4, Surf. Eng. Appl. Electrochem., 2010, vol. 46, p. 276.CrossRef Bakhadyrkhanov, M.K., Sattarov, O.E., Mavlonov, G.Kh., Iliev, Kh.M., et al., Photoconductivity of silicon with multicharged clusters of manganese atoms [Mn]4, Surf. Eng. Appl. Electrochem., 2010, vol. 46, p. 276.CrossRef
8.
Zurück zum Zitat Abdurakhmanov, B.A., Ayupov, K.S., Bakhadyrkhanov, M.K., Iliev, Kh.M., et al., Low-temperature diffusion of impurities in silicon, Dokl. Akad. Nauk Resp. Uzb., 2010, no. 3, p. 23. Abdurakhmanov, B.A., Ayupov, K.S., Bakhadyrkhanov, M.K., Iliev, Kh.M., et al., Low-temperature diffusion of impurities in silicon, Dokl. Akad. Nauk Resp. Uzb., 2010, no. 3, p. 23.
9.
Zurück zum Zitat Bakhadyrkhanov, M.K., Mavlonov, G.Kh., Isamov, S.B., Iliev, Kh.M., et al., Transport properties of silicon doped with manganese via low temperature diffusion, Inorg. Mater., 2011, vol. 47, no. 5, p. 479.CrossRef Bakhadyrkhanov, M.K., Mavlonov, G.Kh., Isamov, S.B., Iliev, Kh.M., et al., Transport properties of silicon doped with manganese via low temperature diffusion, Inorg. Mater., 2011, vol. 47, no. 5, p. 479.CrossRef
10.
Zurück zum Zitat Askarov, Sh.I., Bakhadirkhanov, M.K., Masterov, V.F., and Shtel’makh, V.F., EPR study of the interimpurity interaction of sulfur and manganese in silicon, Fiz. Tekh. Poluprovodn., 1982, vol. 16, no. 7, p. 1308. Askarov, Sh.I., Bakhadirkhanov, M.K., Masterov, V.F., and Shtel’makh, V.F., EPR study of the interimpurity interaction of sulfur and manganese in silicon, Fiz. Tekh. Poluprovodn., 1982, vol. 16, no. 7, p. 1308.
11.
Zurück zum Zitat Bakhadyrkhanov, M.K., Mavlonov G.Kh., Iliev, Kh.M., Ayupov, K.S., et al., Features of magnetoresistance in overcompensated silicon doped with manganese, Fiz. Tekh. Poluprovodn., 2014, vol. 48, no. 8, p. 1014. Bakhadyrkhanov, M.K., Mavlonov G.Kh., Iliev, Kh.M., Ayupov, K.S., et al., Features of magnetoresistance in overcompensated silicon doped with manganese, Fiz. Tekh. Poluprovodn., 2014, vol. 48, no. 8, p. 1014.
Metadaten
Titel
Effect of Manganese Atoms on the Magnetic Properties of Silicon
verfasst von
O. E. Sattarov
A. Mavlyanov
A. An
Publikationsdatum
01.04.2023
Verlag
Pleiades Publishing
Erschienen in
Surface Engineering and Applied Electrochemistry / Ausgabe 2/2023
Print ISSN: 1068-3755
Elektronische ISSN: 1934-8002
DOI
https://doi.org/10.3103/S106837552302014X

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