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Journal of Materials Science: Materials in Electronics

Erschienen in:

06.06.2018

Effect of potassium doping for ultrasonic sprayed Cu₂SnS₃ thin films for solar cell application

verfasst von: Chengzhi Ruan, Jiahua Tao, Chengyun Zhu, Chen Chen

Erschienen in: Journal of Materials Science: Materials in Electronics | Ausgabe 15/2018

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Abstract

In this work, potassium-containing Cu₂SnS₃ thin films (K_xCu_2−xSnS₃) were fabricated by a simple and low-cost ultrasonic spray pyrolysis method on glass substrates with different potassium doping concentration. Effects of various potassium concentrations on the structural, morphological and optical properties of the films were systematically investigated. The results indicate that potassium doping can well enhance the growth of particle size and decrease the band gap of the film from to 1.55 to 1.26 eV. Solar cell devices with a structure of glass/FTO/K_2−xCu₂SnS₃/CdS/ZnO/AZO have been prepared and obvious solar cell device performance improvement has been observed by 2 at% potassium doping. This potassium-containing Cu₂SnS₃ thin films could be a promising absorber material for high efficiency solar cell.

Vorheriger Artikel Studies on linear and nonlinear optical properties of 4-N,N-dimethylamino-4′-N′-methyl-stilbazolium 2,4,6-trimethylbenzenesulfonate crystal

Nächster Artikel Effect of hexamethylenetetramine on the properties of electrodeposited ZnO thin films for dye sensitized solar cell applications

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Titel: Effect of potassium doping for ultrasonic sprayed Cu2SnS3 thin films for solar cell application
verfasst von: Chengzhi Ruan
Jiahua Tao
Chengyun Zhu
Chen Chen
Publikationsdatum: 06.06.2018
Verlag: Springer US
Erschienen in: Journal of Materials Science: Materials in Electronics / Ausgabe 15/2018
Print ISSN: 0957-4522
Elektronische ISSN: 1573-482X
DOI: https://doi.org/10.1007/s10854-018-9401-9

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