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Journal of Materials Science
Erschienen in: Journal of Materials Science 17/2015

01.09.2015 | Review

Electric double-layer transistors: a review of recent progress

verfasst von: Haiwei Du, Xi Lin, Zhemi Xu, Dewei Chu

Erschienen in: Journal of Materials Science | Ausgabe 17/2015

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Abstract

With the miniaturization of electronic devices, it is essential to achieve higher carrier density and lower operation voltage in field-effect transistors (FETs). However, this is a great challenge in conventional FETs owing to the low capacitance and electric breakdown of gate dielectrics. Recently, electric double-layer technology with ultra-high charge-carrier accumulation at the semiconductor channel/electrolyte interface has been creatively introduced into transistors to overcome this problem. Some interesting electrical transport characteristics such as superconductivity, metal–insulator transition, and tunable thermoelectric behavior have been modulated both theoretically and experimentally in electric double-layer transistors (EDLTs) with various semiconductor channel layers and electrolyte materials. The present article is a review of the recent progress in the EDLTs and the impacts of EDLT technology on modulating the charge transportation of various electronics.
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Metadaten
Titel
Electric double-layer transistors: a review of recent progress
verfasst von
Haiwei Du
Xi Lin
Zhemi Xu
Dewei Chu
Publikationsdatum
01.09.2015
Verlag
Springer US
Erschienen in
Journal of Materials Science / Ausgabe 17/2015
Print ISSN: 0022-2461
Elektronische ISSN: 1573-4803
DOI
https://doi.org/10.1007/s10853-015-9121-y

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