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Journal of Computational Electronics
Erschienen in: Journal of Computational Electronics 1/2016

07.12.2015

Electro-thermal simulation based on coupled Boltzmann transport equations for electrons and phonons

verfasst von: T. T. Trang Nghiêm, J. Saint-Martin, P. Dollfus

Erschienen in: Journal of Computational Electronics | Ausgabe 1/2016

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Abstract

To study the thermal effect in nano-transistors, a simulator solving self-consistently the Boltzmann transport equations for both electrons and phonons has been developed. It has been used to investigate the self-heating effects in a 20 nm-long double-gate MOSFET (Fig. 1). A Monte Carlo solver for electrons is coupled with a direct solver for the steady-state phonon transport. The latter is based on the relaxation time approximation. This method is particularly efficient to provide a deep insight of the out-of-equilibrium thermal dissipation occurring at the nanometer scale when the device length is smaller than the mean free path of both charge and thermal carriers. It allows us to evaluate accurately the phonon emission and absorption spectra in both real and energy spaces.
Vorheriger Artikel Special issue: electrothermal and thermoelectric modeling of nanoscale devices
Nächster Artikel Modulation doping and energy filtering as effective ways to improve the thermoelectric power factor

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Metadaten
Titel
Electro-thermal simulation based on coupled Boltzmann transport equations for electrons and phonons
verfasst von
T. T. Trang Nghiêm
J. Saint-Martin
P. Dollfus
Publikationsdatum
07.12.2015
Verlag
Springer US
Erschienen in
Journal of Computational Electronics / Ausgabe 1/2016
Print ISSN: 1569-8025
Elektronische ISSN: 1572-8137
DOI
https://doi.org/10.1007/s10825-015-0773-2

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