Ausgabe 1/2016
Special Issue on Electrothermal and Thermoelectric Modeling of Nanoscale Devices
Inhalt (40 Artikel)
Special issue: electrothermal and thermoelectric modeling of nanoscale devices
Dragica Vasileska, Katerina Raleva
Electro-thermal simulation based on coupled Boltzmann transport equations for electrons and phonons
T. T. Trang Nghiêm, J. Saint-Martin, P. Dollfus
Modulation doping and energy filtering as effective ways to improve the thermoelectric power factor
Neophytos Neophytou, Mischa Thesberg
Additional confirmation of a generalized analytical model based on multistage scattering phenomena to evaluate the ionization rates of charge carriers in semiconductors
Aritra Acharyya, Subhashri Chatterjee, Adrija Das, Apala Banerjee, Aditya Raj Pandey, Aloke Yadav, J. P. Banerjee
Piezoelectric effects on carrier capturing time in a hybrid p–n junction system: a numerical study using finite element method
SeongMin Kim, Jaewook Ha, Jin-Baek Kim
A surface-potential based drain current model for short-channel symmetric double-gate junctionless transistor
Ratul Kumar Baruah, Roy P. Paily
Scalability and process induced variation analysis of polarity controlled silicon nanowire transistor
Chitrakant Sahu, Jawar Singh
Radiation performance of planar junctionless devices and junctionless SRAMs
N. Vinodhkumar, R. Srinivasan
A simulation study of short channel effects with a QET model based on Fermi–Dirac statistics and nonparabolicity for high-mobility MOSFETs
Shohiro Sho, Shinji Odanaka, Akira Hiroki
Asymmetric dual-k spacer trigate FinFET for enhanced analog/RF performance
Gaurav Saini, Sudhanshu Choudhary
Analog performance investigation of dual electrode based doping-less tunnel FET
Sunny Anand, S. Intekhab Amin, R. K. Sarin
Compact 2D modeling and drain current performance analysis of a work function engineered double gate tunnel field effect transistor
Saheli Sarkhel, Navjeet Bagga, Subir Kumar Sarkar
Numerical guidelines for setting up a k.p simulator with applications to quantum dot heterostructures and topological insulators
Parijat Sengupta, Hoon Ryu, Sunhee Lee, Yaohua Tan, Gerhard Klimeck
Analysis of tunneling currents in multilayer black phosphorous and non-volatile flash memory cells
Bikash Sharma, Arnab Mukhopadhyay, Amretashis Sengupta, Hafizur Rahaman, C. K. Sarkar
Silicene field effect transistor with high on/off current ratio and good current saturation
Mehran Vali, Daryoosh Dideban, Negin Moezi
Energy relaxation of hot carriers in graphene via plasmon interactions
D. K. Ferry, R. Somphonsane, H. Ramamoorthy, J. P. Bird
Optimal design of the multiple-apertures-GaN-based vertical HEMTs with current blocking layer
Niraj Man Shrestha, Yiming Li, Edward Yi Chang
A novel symmetrical 4H–SiC MESFET: an effective way to improve the breakdown voltage
Zeinab Ramezani, Ali A. Orouji, Hassan Agharezaei
Characterization of AlGaN/GaN and AlGaN/AlN/GaN HEMTs in terms of mobility and subthreshold slope
Santashraya Prasad, Amit Krishna Dwivedi, Aminul Islam
Physics-based simulation of 4H-SIC DMOSFET structure under inductive switching
Bejoy N. Pushpakaran, Stephen B. Bayne, Aderinto A. Ogunniyi
Design and analysis of broadband magneto-electric dipole antenna for LTE femtocell base stations
Idayachandran Govindanarayanan, Nakkeeran Rangaswamy, Rajesh Anbazhagan
Effect of magnetic field on the RF performance of millimeter-wave IMPATT source
Partha Banerjee, Aritra Acharyya, Arindam Biswas, A. K. Bhattacharjee
Design of a wideband gap-coupled modified square fractal antenna
Dinesh Kumar Srivastava, Anshika Khanna, Jai Prakash Saini
TCAD simulation and modeling of impact ionization (II) enhanced thin film c-Si solar cells
Vikas Kumar, Ammar Nayfeh
Numerical simulation of the impact of design parameters on the performance of back-contact back-junction solar cell
P. Procel, M. Zanuccoli, V. Maccaronio, F. Crupi, G. Cocorullo, P. Magnone, C. Fiegna
Analytical study of a-Si:H/c-Si thin heterojunction solar cells with back surface field
Monem Krichen, Adel Ben Arab
Theoretical study of the impact of rear interface passivation on MWT silicon solar cells
Massimo Nicolai, Mauro Zanuccoli, Paolo Magnone, Diego Tonini, Enrico Sangiorgi, Claudio Fiegna
Optoelectronic simulation and optimization of unconstrained four terminal amorphous silicon/crystalline silicon tandem solar cell
William Taube Navaraj, Beerendra Kumar Yadav, Anil Kumar
Analog implementation of neuron–astrocyte interaction in tripartite synapse
Mahnaz Ranjbar, Mahmood Amiri
A novel design of quantum dot cellular automata 5-input majority gate with some physical proofs
Sankit R. Kassa, R. K. Nagaria
Zero and negative energy dissipation at information-theoretic erasure
Laszlo Bela Kish, Claes-Göran Granqvist, Sunil P. Khatri, Ferdinand Peper
Response to “Comment on ‘Zero and negative energy dissipation at information-theoretic erasure”’
Laszlo Bela Kish, Claes-Göran Granqvist, Sunil P. Khatri, Ferdinand Peper