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Erschienen in:
01.02.2012
Electrochemical synthesis and characterization of CdSnSe thin films
Erschienen in: Journal of Materials Science: Materials in Electronics | Ausgabe 2/2012
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Abstract
The effects of deposition potentials on the electrochemical, structural, morphological and optical properties of the CdSnSe films are studied. X-ray diffraction patterns revealed a mix of cubic and orthogonal phases for the grown CdSnSe thin films. The refractive index, extinction coefficient, dielectric constant and thereby the optical band gap of the films are calculated from transmittance spectral data recorded in the range 400–1,200 nm by UV–Vis–NIR Spectrometer. The optical band gap energy of CdSnSe thin films is found to be in the range of 1.23–1.25 eV. Morphological studies revealed nano-rod shaped grains occupied over the entire surface of the film with average grain size of 150 nm. The influence of deposition potential on the microstructural properties of CdSnSe is also explained in the paper.