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Journal of Materials Science: Materials in Electronics

Erschienen in:

01.01.2024

Elucidating the structure, ferroic properties and magnetoelectric coupling in Dy-doped BiFeO₃ nanostructures

verfasst von: Asif Nazir Ganie, Mehraj ud Din Rather, Basharat Want

Erschienen in: Journal of Materials Science: Materials in Electronics | Ausgabe 2/2024

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Abstract

Multifunctional Bi_1−xDy_xFeO₃ (x = 0.00, 0.20, 0.25 and 0.30) nanostructures were prepared successfully via the hydrothermal method. X-ray Diffraction analysis confirmed the rhombohedral (R₃C) structure of the main phase. The Dy-doping enhanced the magnetoelectric properties, linked to the decline in crystallite and grain size. The lowest band gap (2.05 eV) is observed in the Bi_0.7Dy_0.3FeO₃ system. The dielectric properties were improved by Dy-doping, with the highest dielectric constant of 25.94 observed in Bi_0.7Dy_0.3FeO₃. By Dy-doping, the ferromagnetism is induced in BiFeO_3, with saturation magnetization of 7.27 emu/g in Bi_0.7Dy_0.3FeO₃ nanostructure, while electric polarization and coercive field are reduced. The coexistence of ferroelectric and ferromagnetic behaviour established the multiferroic nature, with the highest coupling coefficient of 0.85 mV/cm/Oe in Bi_0.7Dy_0.3FeO₃. In conclusion, the Dy-doped BiFeO₃ nanostructures with improved dielectric constant, reduced band gap, strong ferromagnetism, and fascinating magnetoelectric coupling make them suitable candidates for optoelectronic and magnetoelectric devices.

Vorheriger Artikel An investigation of microwave dielectric properties of BaZr0.25Ti0.75O3 and performance of DRA for 5G application

Nächster Artikel Distinct nickel-precursor synthesized NiO NPs on the degradation of biological staining dyes: a green route

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Titel: Elucidating the structure, ferroic properties and magnetoelectric coupling in Dy-doped BiFeO3 nanostructures
verfasst von: Asif Nazir Ganie
Mehraj ud Din Rather
Basharat Want
Publikationsdatum: 01.01.2024
Verlag: Springer US
Erschienen in: Journal of Materials Science: Materials in Electronics / Ausgabe 2/2024
Print ISSN: 0957-4522
Elektronische ISSN: 1573-482X
DOI: https://doi.org/10.1007/s10854-023-11789-6

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