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Journal of Materials Science: Materials in Electronics
Erschienen in: Journal of Materials Science: Materials in Electronics 6/2014

01.06.2014

Enhanced photovoltaic performance of quantum dot sensitized solar cells with Ag-doped TiO2 nanocrystalline thin films

verfasst von: A. Ranjitha, N. Muthukumarasamy, M. Thambidurai, Dhayalan Velauthapillai

Erschienen in: Journal of Materials Science: Materials in Electronics | Ausgabe 6/2014

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Abstract

Ag-doped titanium dioxide (TiO2) nanocrystalline thin films have been prepared by the sol–gel dip coating method and used as photoanode to fabricate quantum dot sensitized solar cells. The X-ray diffraction studies reveal the formation of anatase phase without any impurity phase. The surface morphology studied using scanning electron microscope shows uniform distribution of particles. The optical band gap was found to be 3.5 and 3.4 eV for CdS quantum dot sensitized TiO2 and CdS quantum dot sensitized Ag-doped TiO2 thin film respectively. The Ag-doped TiO2 based solar cell exhibited a power conversion efficiency of 1.48 % which is higher than that of TiO2 (0.9 %).
Vorheriger Artikel 3D-assembled graphene–LiFePO4 frameworks with enhanced electrochemical performance
Nächster Artikel Bismuth sodium titanate based lead-free ceramic/epoxy 1–3 composites: fabrication and electromechanical properties

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Metadaten
Titel
Enhanced photovoltaic performance of quantum dot sensitized solar cells with Ag-doped TiO2 nanocrystalline thin films
verfasst von
A. Ranjitha
N. Muthukumarasamy
M. Thambidurai
Dhayalan Velauthapillai
Publikationsdatum
01.06.2014
Verlag
Springer US
Erschienen in
Journal of Materials Science: Materials in Electronics / Ausgabe 6/2014
Print ISSN: 0957-4522
Elektronische ISSN: 1573-482X
DOI
https://doi.org/10.1007/s10854-014-1935-x

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