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Journal of Materials Science

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01.11.2015 | Original Paper

Enhancing the memory window of AZO/ZnO/ITO transparent resistive switching devices by modulating the oxygen vacancy concentration of the top electrode

verfasst von: Firman Mangasa Simanjuntak, Debashis Panda, Tsung-Ling Tsai, Chun-An Lin, Kung-Hwa Wei, Tseung-Yuen Tseng

Erschienen in: Journal of Materials Science | Ausgabe 21/2015

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Abstract

The effect of a defect concentration-modified top electrode on the bipolar resistance switching of transparent Al-doped ZnO/ZnO/ITO [AZO(TE)/ZnO/ITO(BE)] devices was investigated. Different oxygen vacancy concentrations in the top electrode, Al-doped ZnO, can be simply controlled by modulating the sputtering working pressure condition from 1.2 to 12 mTorr. The oxygen vacancy concentration between AZO and ZnO may trigger oxygen diffusion at the interface and affect the switching characteristic. High oxygen release from a ZnO resistive layer caused by excessive oxygen vacancy concentration at the top electrode is responsible for reducing the memory window as a result of reduced oxygen available to rupture the filament. Top electrode based on lower oxygen vacancy concentration has a higher memory window and an asymmetric resistive switching characteristic. However, all set of devices have excellent endurance of more than 10⁴ cycles. This study showed that an Al-doped ZnO top electrode helps not only to achieve a transparent device but also to enhance memory properties by providing a suitable oxygen vacancy concentration.

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Titel: Enhancing the memory window of AZO/ZnO/ITO transparent resistive switching devices by modulating the oxygen vacancy concentration of the top electrode
verfasst von: Firman Mangasa Simanjuntak
Debashis Panda
Tsung-Ling Tsai
Chun-An Lin
Kung-Hwa Wei
Tseung-Yuen Tseng
Publikationsdatum: 01.11.2015
Verlag: Springer US
Erschienen in: Journal of Materials Science / Ausgabe 21/2015
Print ISSN: 0022-2461
Elektronische ISSN: 1573-4803
DOI: https://doi.org/10.1007/s10853-015-9247-y

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