Skip to main content
Fachgebiete
Automobil + Motoren Bauwesen + Immobilien Business IT + Informatik Elektrotechnik + Elektronik Energie + Nachhaltigkeit Finance + Banking Management + Führung Marketing + Vertrieb Maschinenbau + Werkstoffe Versicherung + Risiko
DE
EN
Themenseiten
Organisationspsychologie Projektmanagement Marketing Smart Manufacturing
Bücher
Zeitschriften
Weitere Formate
Podcasts Webinare Technik Webinare Wirtschaft Kongresse Veranstaltungskalender Awards
Jetzt Einzelzugang starten
Zugang für Unternehmen
Referenzkunden
MTZ-Fachkongress

Antriebe und Energiesysteme von morgen


Austausch von Automobil- und Energiewirtschaft

Am 14./15. Mai geht es in Chemnitz um die Mobilitätswende durch Elektro- und Wasserstofffahrzeuge.
Erweiterte Suche
Anmelden
nach oben
Journal of Materials Science: Materials in Electronics
Erschienen in: Journal of Materials Science: Materials in Electronics 11/2024

01.04.2024

Enhancing ZnO/Si heterojunction photodetector performance for ultra high responsivity across wide spectral range

verfasst von: Ratneshwar Kumar Ratnesh, Mrityunjay Kumar Singh, Jay Singh

Erschienen in: Journal of Materials Science: Materials in Electronics | Ausgabe 11/2024

Einloggen

Aktivieren Sie unsere intelligente Suche, um passende Fachinhalte oder Patente zu finden.

search-config
loading …

Abstract

This study outlines strategies for the development of an ultra-high responsivity wide band ZnO/Si-based heterojunction photodetector (PD). The incorporation of a UV-enhanced Si-Photodiode introduces a novel approach to enhance PD performance and functionality, offering potential building blocks for innovative optoelectronic devices. The ZnO/Si heterojunction proves effective in modulating the generation, separation, and recombination of photo-generated electron–hole pairs throughout the optoelectronic process. Notably, the ZnO/Si PD operates across a wide spectral range, from ultraviolet to infrared, demonstrating enhanced quantum efficiency, responsivity, and detectivity, coupled with a reduction in dark current. Additionally, system parameters such as thickness, wavelength of activity, and bias voltage have been simulated to elucidate the electrical and optical characteristics of the heterojunction PD.
Vorheriger Artikel An conductive ink based on silver oxide complex for low-temperature sintering with dense conductive paths
Nächster Artikel Role of natural extracts on the synthesis and properties of semiconductor nanoparticles of ZnO applied in water treatment by photocatalytic processes

Sie haben noch keine Lizenz? Dann Informieren Sie sich jetzt über unsere Produkte:

Springer Professional "Wirtschaft+Technik"

Online-Abonnement

Mit Springer Professional "Wirtschaft+Technik" erhalten Sie Zugriff auf:

  • über 102.000 Bücher
  • über 537 Zeitschriften

aus folgenden Fachgebieten:

  • Automobil + Motoren
  • Bauwesen + Immobilien
  • Business IT + Informatik
  • Elektrotechnik + Elektronik
  • Energie + Nachhaltigkeit
  • Finance + Banking
  • Management + Führung
  • Marketing + Vertrieb
  • Maschinenbau + Werkstoffe
  • Versicherung + Risiko

Jetzt Wissensvorsprung sichern!

Jetzt informieren

Springer Professional "Technik"

Online-Abonnement

Mit Springer Professional "Technik" erhalten Sie Zugriff auf:

  • über 67.000 Bücher
  • über 390 Zeitschriften

aus folgenden Fachgebieten:

  • Automobil + Motoren
  • Bauwesen + Immobilien
  • Business IT + Informatik
  • Elektrotechnik + Elektronik
  • Energie + Nachhaltigkeit
  • Maschinenbau + Werkstoffe




 

Jetzt Wissensvorsprung sichern!

Jetzt informieren

Springer Professional "Wirtschaft"

Online-Abonnement

Mit Springer Professional "Wirtschaft" erhalten Sie Zugriff auf:

  • über 67.000 Bücher
  • über 340 Zeitschriften

aus folgenden Fachgebieten:

  • Bauwesen + Immobilien
  • Business IT + Informatik
  • Finance + Banking
  • Management + Führung
  • Marketing + Vertrieb
  • Versicherung + Risiko




Jetzt Wissensvorsprung sichern!

Jetzt informieren
Literatur
1.
R. Hridaynath, Materials for opto-electronics. IETE Tech. Rev. 2, 12337 (1985)
2.
M.M. Mandhare, S.A. Gangal, R.N. Karekar, Effect of thick film and bulk ZnO overlays on Ag thick film microstrip rejection filter. IETE Tech. Rev. 6, 490–491 (1989)CrossRef
3.
R.K. Ratnesh, A. Goel, G. Kaushik, H. Garg, M.S. Chandan, B. Prasad, Advancement and challenges in MOSFET scaling. Mater. Sci. Semicond. Process. 134, 106002 (2021)CrossRef
4.
R.K. Ratnesh, Hot injection blended tunable CdS quantum dots for production of blue LED and a selective detection of Cu2+ ions in aqueous medium. J. Opt. Laser Technol. 116, 103–1116 (2019)CrossRef
5.
T.J. Bukowski, K. McCarthy, F. McCarthy, G. Tower, T.P. Alexander, D.R. Uhlmann, J.T. Dawley, B.J.J. Zelinski, Piezoelectric properties of sol gel derived ZnO thin films. Integr. Ferroelectr. 17, 339–347 (1997)CrossRef
6.
S. Jeong, J.H. Kim, S. Im, Ultraviolet-enhanced photodiode employing n-ZnO/p-Si structure. Appl. Phys. Lett. 83(14), 2946–2948 (2003)CrossRef
7.
Y.I. Alive, J.E. Van Nostrand, D.C. Look, M.V. Chukichev, B.M. Ataev, Observation of 430 nm electroluminescence from ZnO/GaN heterojunction light emitting diodes. Appl. Phys. Lett. 83, 2943–2945 (2003)CrossRef
8.
H. Zimmermann, Silicon Photonics, Topics in Applied Physics (Springer, New York, 2004)
9.
S. Sharma, C. Periasamy, A study on the electrical characteristic of n-ZnO/p-Si heterojunction diode prepared by vacuum coating technique. Superlattices Microstruct. 73, 12–21 (2014)CrossRef
10.
11.
S. Sharma, S. Vyas, C. Periasamy, P. Chakrabarti, Structural and optical characterization of ZnO thin films for optoelectronic device applications by RF sputtering technique. Superlattices Microstruct. 75, 378–389 (2014)CrossRef
12.
R.K. Ratnesh, M. Singh, S. Pathak, V. Dakulagi, Reactive magnetron sputtered-assisted deposition of nanocomposite thin films with tunable magnetic, electrical and interfacial properties. J. Nanopart. Res. 22, 290 (2020)CrossRef
13.
R.K. Ratnesh, M.S. Mehata, Synthesis and optical properties of core-multi-shell CdSe/CdS/ZnS quantum dots: surface modifications. Opt. Mater. 64, 250–256 (2017)CrossRef
14.
M.S. Mehata, R.K. Ratnesh, Luminescent properties and exciton dynamics of core-multi-shell semiconductor quantum dots leading to QLEDs. Dalton Trans. 48, 7619–7631 (2019)CrossRefPubMed
15.
R.K. Ratnesh, M.S. Mehata, Tunable single and double emission semiconductor nanocrystal quantum dots: a multianalyte sensor. Methods Appl. Fluoresc. 6, 035006 (2018)CrossRefPubMed
16.
B.L. Sharma, R.K. Purohit, Semiconductor Heterojunctions (Pergamon Press, New York, 1974)
17.
S. Sharma, C. Periasamy, Simulation study and performance analysis of n-ZnO/p-Si heterojunction photodetector. J. Electron Devices 19, 1633–1636 (2014)
18.
P.K. Saxena, P. Chakrabarti, Computer modeling of MWIR single heterojunction photodetector based on mercury cadmium telluride. Infrared Phys. Technol. 52, 196–203 (2009)CrossRef
19.
R.K. Lal, M. Jain, S. Gupta, P. Chakrabarti, An analytical model of a double-heterostructure mid-infrared photodetector. Infrared Phys. Technol. 44, 125–132 (2003)CrossRef
20.
A.D.D. Dwivedi, Analytical modeling and numerical simulation of PC-Hg0.69Cd0.31Te/n-Hg0.78Cd0.22Te/CdZnTe heterojunction photodetector for a long-wavelength infrared free space optical communication system. J. Appl. Phys. 110, 043101–10 (2011)CrossRef
21.
C.H. Park, I.S. Jeong, J.H. Kim, S. Im, Spectral responsivity and quantum efficiency of n-ZnO/p-Si photodiode fully isolated by ion-beam treatment. Appl. Phys. Lett. 82, 3973–3975 (2003)CrossRef
22.
G.M. Ali, P. Chakrabarti, Performance of ZnO-based ultraviolet photodetectors under varying thermal treatment. IEEE Photon. J. 2, 784–793 (2010)CrossRef
23.
S. Mridha, M. Dutta, D. Basak, Photoresponse of nZnO/p-Si heterojunction towards ultraviolet/visible lights: thickness dependent behaviour. J. Mater. Sci. Mater. Electron. 20, 376–379 (2009)CrossRef
24.
R.K. Lal, P. Chakrabarti, An analytical model of PCInAsSbP/no -InAs/nC-InAs single heterojunction photodetector for 2.4–3.5 mm region. Opt. Quantum Electron. 36, 93547 (2004)CrossRef
25.
P. Chakrabarti, A. Krier, A.F. Morgan, Analysis and simulation of a mid-infrared PC-InAs0.55Sb0.15P0.30/n0-InAs0.89Sb0.11/NC-InAs0.55Sb0.15P0.30double heterojunction photodetector grown by LPE. IEEE Trans. Electron Devices 50, 2049–58 (2003)CrossRef
26.
A.D.D. Dwivedi, A. Mittal, A. Agrawal, P. Chakrabarti, Analytical modeling and ATLAS simulation of N+-InP/n0-In0.53Ga0.47As/p+-In0.53Ga0.47 as p-i-n photodetector for optical fiber communication. Infrared Phys. Technol. 53, 236–245 (2010)CrossRef
27.
T.J. Bukowski, K. McCarthy, F. McCarthy, G. Teowee, T.P. Alexander, D.R. Uhlmann, J.T. Dawley, B.J.J. Zelinski, Piezoelectric properties of sol–gel derived ZnO thin films. Integr. Ferroelectr. 17, 339–347 (1997)CrossRef
28.
C. Soci, A. Zhang, B. Xiang, S.A. Dayeh, D.P.R. Aplin, J. Park, X.Y. Bao, Y.H. Lo, D. Wang, ZnO nanowire UV photodetectors with high internal gain. Nano Lett. 7, 1003–1009 (2007)CrossRefPubMed
29.
B.Z. Dong, G.J. Fang, J.F. Wang, W.J. Guan, X.Z. Zhao, Effect of thickness on structural, electrical, and optical properties of ZnO: Al films deposited by pulsed laser deposition. J. Appl. Phys. 101, 033713 (2007)CrossRef
30.
S. Kishimoto, T. Yamamoto, Y. Nakagawa, K. Ikeda, H. Makino, T. Yamada, Dependence of electrical and structural properties on film thickness of undoped ZnO thin films prepared by plasma-assisted electron beam deposition. Superlattices Microstruct. 39, 306–313 (2006)CrossRef
31.
R.K. Lal, P. Chakrabarti, An analytical model of P+-InAsSbP/no-InAs/n+-InAs single heterojunction photodetector for 2.4–3.5 μm region. Opt. Quantum Electron. 36, 935–947 (2004)CrossRef
32.
J.Y. Lee, Y.S. Choi, J.H. Kim, M.O. Park, S. Im, Optimizing n-ZnOyp-Si heterojunctions for photodiode applications. Thin Solid Films 403–404, 553–557 (2002)CrossRef
33.
S. Mridha, D. Basak, Ultraviolet and visible photoresponse properties of n-ZnO/p-Si heterojunction. J. Appl. Phys. 101, 083102 (2007)CrossRef
34.
S. Sharma, C. Periasamy, Effect of sputtering power on structural and optical properties of ZnO thin films grown by RF sputtering technique. J. Nanoelectron. Optoelectron. 10, 205–210 (2015)CrossRef
35.
H. Ohta, K. Kawamura, M. Orita, M. Hirano, N. Sarukura, H. Hosono, Current injection emission from a transparent p–n junction composed of p-SrCu2O2/n-ZnO. Appl. Phys. Lett. 77, 475–477 (2000)CrossRef
36.
D. Kumar, M.K. Singh, M.S. Mehata, Exploration of grown cobalt-doped zinc oxide nanoparticles and photodegradation of industrial dye. Mater. Res. Bull. 150, 111795 (2022)CrossRef
Metadaten
Titel
Enhancing ZnO/Si heterojunction photodetector performance for ultra high responsivity across wide spectral range
verfasst von
Ratneshwar Kumar Ratnesh
Mrityunjay Kumar Singh
Jay Singh
Publikationsdatum
01.04.2024
Verlag
Springer US
Erschienen in
Journal of Materials Science: Materials in Electronics / Ausgabe 11/2024
Print ISSN: 0957-4522
Elektronische ISSN: 1573-482X
DOI
https://doi.org/10.1007/s10854-024-12516-5

Weitere Artikel der Ausgabe 11/2024

Journal of Materials Science: Materials in Electronics 11/2024 Zur Ausgabe

OriginalPaper

Green innovation: cool white light emission from inorganic ZnS nanoparticles with tunable structural and optical properties

OriginalPaper

Electrical characterization of Ag/MoO3−x/p-Si Schottky diodes based on MoO3−x synthesized via sol–gel method: an investigation on frequency and voltage dependence

Correction

Correction: Effect of Ni dopant on the capacitive behavior of CuS for supercapacitor application

OriginalPaper

Aspects of annealing and particle morphology on the microwave absorption characteristics of carbonyl iron powders

OriginalPaper

Sol–gel assisted incremental substitution of Ni with Ba in barium ferrichromites and their photocatalytic activity

OriginalPaper

Exploring various Integration Methods of carbon quantum dots in CsPbCl3 perovskite solar cells for enhanced power conversion efficiency

Neuer Inhalt

    Bildnachweise