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11.02.2015 | Technical Paper

Evaluation of the bond quality of laser-joined sapphire wafers using a fresnoite-glass sealant

verfasst von: A. de Pablos-Martín, S. Tismer, F. Naumann, M. Krause, M. Lorenz, M. Grundmann, Th. Höche

Erschienen in: Microsystem Technologies | Ausgabe 1/2016

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Abstract

Two sapphire substrates were bonded using a fresnoite glass thin film as a sealant, by irradiation with a 1,064 nm ns laser. The sapphire close to the interface was examined by TEM, showing some structural defects due to the laser processing. Bond quality and strength were evaluated by scanning acoustic microscopy (SAM) and micro-chevron testing, respectively. Optimization of laser parameters lead to an improved processing speed (>1 mm/s) as well as an enhanced fracture toughness to 1.23 MPa m^1/2.

Vorheriger Artikel Static, eigenvalue problem and bifurcation analysis of MEMS arches actuated by electrostatic fringing-fields

Nächster Artikel Fabrication of high aspect ratio silicon micro-structures based on aluminum mask patterned by IBE and RIE processing

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Titel: Evaluation of the bond quality of laser-joined sapphire wafers using a fresnoite-glass sealant
verfasst von: A. de Pablos-Martín
S. Tismer
F. Naumann
M. Krause
M. Lorenz
M. Grundmann
Th. Höche
Publikationsdatum: 11.02.2015
Verlag: Springer Berlin Heidelberg
Erschienen in: Microsystem Technologies / Ausgabe 1/2016
Print ISSN: 0946-7076
Elektronische ISSN: 1432-1858
DOI: https://doi.org/10.1007/s00542-015-2459-x

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