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Journal of Computational Electronics
Erschienen in: Journal of Computational Electronics 4/2019

08.10.2019

Exciton states in InGaAsP/InP core–shell quantum dots under an external electric field

verfasst von: Min Hu, Hailong Wang, Qian Gong, Shumin Wang

Erschienen in: Journal of Computational Electronics | Ausgabe 4/2019

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Abstract

The effect of an external electric field on the exciton states of InGaAsP/InP core–shell quantum dots is investigated through the variational method. The effect of the shell thickness, core radius, electric field strength, and material components on the exciton states are analyzed in detail. The numerical results show that the electron and hole energies decrease as the shell thickness or core radius is increased. The Bohr radius is a nonmonotonic function of the shell thickness or core radius, and the change of the exciton binding energy is nonlinear as the shell thickness or core radius is increased. With increasing electric field strength, the Bohr radius increases while the exciton binding energy decreases. The exciton binding energy decreases (increases) as the Ga (As) component is increased.
Vorheriger Artikel Investigation of layer number effects on the electrical properties of strained multi-layer MoS2
Nächster Artikel Proposal of a novel recess-free enhancement-mode AlGaN/GaN HEMT with field-assembled structure: a simulation study

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Metadaten
Titel
Exciton states in InGaAsP/InP core–shell quantum dots under an external electric field
verfasst von
Min Hu
Hailong Wang
Qian Gong
Shumin Wang
Publikationsdatum
08.10.2019
Verlag
Springer US
Erschienen in
Journal of Computational Electronics / Ausgabe 4/2019
Print ISSN: 1569-8025
Elektronische ISSN: 1572-8137
DOI
https://doi.org/10.1007/s10825-019-01404-5

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