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Erschienen in: Journal of Materials Science: Materials in Electronics 2/2017

24.09.2016

Fabrication of p-type ZnTe NW/In Schottky diodes for high-speed photodetectors

verfasst von: Yuan Chang, Di Wu, Tingting Xu, Zhifeng Shi, Yongtao Tian, Xinjian Li

Erschienen in: Journal of Materials Science: Materials in Electronics | Ausgabe 2/2017

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Abstract

Nitrogen-doped p-type ZnTe nanowires were successfully synthesized by a chemical vapor deposition method. Schottky junctions based on Au/ZnTe NW/In structure were constructed and their device performances were studied. ZnTe/In Schottky junction devices show excellent rectifying characteristics with rectification ratio up to 103 within ±5 V. Photoresponse analysis reveals that such devices were highly sensitive to varying optical signal with excellent stability, reproducibility and fast response speeds of 69/120 μs. These results demonstrate that ZnTe/In Schottky junction devices will promote the applications of ZnTe 1D nanostructures in electronic and optoelectronics.

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Metadaten
Titel
Fabrication of p-type ZnTe NW/In Schottky diodes for high-speed photodetectors
verfasst von
Yuan Chang
Di Wu
Tingting Xu
Zhifeng Shi
Yongtao Tian
Xinjian Li
Publikationsdatum
24.09.2016
Verlag
Springer US
Erschienen in
Journal of Materials Science: Materials in Electronics / Ausgabe 2/2017
Print ISSN: 0957-4522
Elektronische ISSN: 1573-482X
DOI
https://doi.org/10.1007/s10854-016-5718-4

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