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Microsystem Technologies
Erschienen in: Microsystem Technologies 7-8/2012

01.08.2012 | Technical Paper

Fabrication, packaging, and characterization of p-SOI Wheatstone bridges for harsh environments

verfasst von: J. Kähler, A. Stranz, L. Doering, S. Merzsch, N. Heuck, A. Waag, E. Peiner

Erschienen in: Microsystem Technologies | Ausgabe 7-8/2012

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Abstract

Strain gauges in p-type silicon-on-insulator (SOI) were investigated for data logging during deep drilling. Different metallization systems (Ti/Pt/Au, Ti/Pd/Au, and Ti/TiN/Au) were tested for high temperatures by measuring the specific resistance over time. Pressure-assisted Pick-and-Place silver sintering was applied to attach the fabricated p-SOI Wheatstone bridges on substrate carriers. The influence of the joining technique on the offset voltage was investigated as well as the temperature behavior during temperature cycling (50 cycles from 30°C up to 250°C). Furthermore, the temperature dependence of noise was analyzed.
Vorheriger Artikel Platinated ultrathin films made of carbon nanotubes
Nächster Artikel Long-term stability of Ag and Cu thin films on glass, LTCC and alumina substrates

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Metadaten
Titel
Fabrication, packaging, and characterization of p-SOI Wheatstone bridges for harsh environments
verfasst von
J. Kähler
A. Stranz
L. Doering
S. Merzsch
N. Heuck
A. Waag
E. Peiner
Publikationsdatum
01.08.2012
Verlag
Springer-Verlag
Erschienen in
Microsystem Technologies / Ausgabe 7-8/2012
Print ISSN: 0946-7076
Elektronische ISSN: 1432-1858
DOI
https://doi.org/10.1007/s00542-011-1396-6

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