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Journal of Materials Science: Materials in Electronics

Erschienen in:

03.06.2019

GLAD synthesised erbium doped In₂O₃ nano-columns for UV detection

verfasst von: Anupam Ghosh, Punam Murkute, Rini Lahiri, Subhananda Chakrabarti, Kalyan Kumar Chattopadhyay, Aniruddha Mondal

Erschienen in: Journal of Materials Science: Materials in Electronics | Ausgabe 13/2019

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Abstract

We have reported the growth of In₂O₃ and Er-doped In₂O₃ (In₂O₃:Er) nano-columns (NCols) by e-beam cum GLAD techniques. An increase in the packing density of the NCols was observed with increasing Er doping. In₂O₃ shows a body-centred cubic crystal structure. Reduction in the crystallite size with Er-doping is observed. The bandgap of undoped In₂O₃ NCols (~ 3.50 eV) is increased to a maximum ~ 3.80 eV (0.48 at.% Er). The free carrier and trap concentration decrease from ~ 1.46 × 10¹⁷ to ~ 4.18 × 10¹⁵ cm⁻³ and ~ 2.78 × 10¹⁷ cm⁻³ to ~ 8.45 × 10¹⁵ cm⁻³ respectively for In₂O₃ NCol and 0.48 at.% In₂O₃:Er NCol control samples. The Au/0.48 at.% In₂O₃:Er/Si device showed higher sensitivity towards white light and 350 nm UV light compared to other devices under different applied powers of the xenon (Xe) lamp. The UV responsivity was observed to be ~ 2.2 times larger than the visible light. The temporal response of Au/0.48 at.% In₂O₃:Er/Si device also showed noteworthy development.

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Titel: GLAD synthesised erbium doped In2O3 nano-columns for UV detection
verfasst von: Anupam Ghosh
Punam Murkute
Rini Lahiri
Subhananda Chakrabarti
Kalyan Kumar Chattopadhyay
Aniruddha Mondal
Publikationsdatum: 03.06.2019
Verlag: Springer US
Erschienen in: Journal of Materials Science: Materials in Electronics / Ausgabe 13/2019
Print ISSN: 0957-4522
Elektronische ISSN: 1573-482X
DOI: https://doi.org/10.1007/s10854-019-01638-w

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