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Journal of Materials Science: Materials in Electronics
Erschienen in: Journal of Materials Science: Materials in Electronics 1/2021

01.01.2021

Graphene quantum dots modified W18O49 as SERS substrate for MB detection

verfasst von: Yun Lei, Peng Du, Jiaxin Hu, Zhong Ouyang, Zicong Jiang, Yuanyuan Lin, Yuncui Wu

Erschienen in: Journal of Materials Science: Materials in Electronics | Ausgabe 1/2021

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Abstract

Surface-enhanced Raman scattering (SERS) as a sensitive detection method had attracted tremendous attention. Graphene quantum dots (GQDs) were synthesized by a top–down approach, and the W18O49 samples were prepared by a solvothermal method with WCl6 as the tungsten source. The size of prepared GQDs presented a size of 10 nm and a topographic height of 1.5 nm, corresponding to 1–3 layers of graphene sheets. There were two different lattice fringes of 0.34 nm and 0.378 nm matched with the (002) and (010) lattice planes of GQDs and W18O49, respectively. After the modification of GQDs, the band gap energy of W18O49 was narrowed, and the separation and electron transport capability of W18O49 were improved due to the existence of GQDs. In this work, the detection sensitivity of SERS was effectively improved by chemical and electromagnetic field enhancement when W18O49/GQDs composites were used as SERS substrates. Therefore, it will be an effective way to improve the SERS performance of W18O49 by modifying GQDs.
Vorheriger Artikel Efficiency improvement of passivated emitter and rear cells using annealing process before surface passivation
Nächster Artikel Novel polyethersulfone dielectric films with high temperature resistance, intrinsic low dielectric constant and low dielectric loss

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Metadaten
Titel
Graphene quantum dots modified W18O49 as SERS substrate for MB detection
verfasst von
Yun Lei
Peng Du
Jiaxin Hu
Zhong Ouyang
Zicong Jiang
Yuanyuan Lin
Yuncui Wu
Publikationsdatum
01.01.2021
Verlag
Springer US
Erschienen in
Journal of Materials Science: Materials in Electronics / Ausgabe 1/2021
Print ISSN: 0957-4522
Elektronische ISSN: 1573-482X
DOI
https://doi.org/10.1007/s10854-020-04872-9

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