Anzeige
Erschienen in:
01.01.2014
Growth of regular-shaped β-Ga2O3 nanorods by Ni2+-ion-catalyzed chemical vapor deposition
Erschienen in: Journal of Materials Science: Materials in Electronics | Ausgabe 1/2014
EinloggenAktivieren Sie unsere intelligente Suche, um passende Fachinhalte oder Patente zu finden.
Wählen Sie Textabschnitte aus um mit Künstlicher Intelligenz passenden Patente zu finden. powered by
Markieren Sie Textabschnitte, um KI-gestützt weitere passende Inhalte zu finden. powered by
Abstract
Regular-shaped monoclinic β-Ga2O3 nanorods with square cross-sections were successfully synthesized and characterized by Ni2+-ion-catalyzed chemical vapor deposition method using CaF2 as a dispersant. The composition, crystal structure, morphology, and optical property were characterized in detail. X-ray diffraction data indicate that the product was a single monoclinic β-Ga2O3 phase with high purity. The regular-shaped nanorods had square cross-sections and an approximate size of 250 nm in diameter and 500–1,000 nm in length. A broad and strong emission band that ranged from 300 to 650 nm was observed with three bands centered at approximately 405 (blue), 467 (dark blue), and 520 nm (green). The growth mechanism of β-Ga2O3 nanorods was consistent with the vapor–solid growth mechanism.